BA592/BA892... Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance (typ. 0.45 Ω @ 3 mA) • Small capacitance • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BA592 BA892/-02L BA892-02V Type BA592 BA892 BA892-02L BA892-02V Package SOD323 SCD80 TSLP-2-1 SC79 Configuration single single single, leadless single LS(nH) 1.8 0.6 0.4 0.6 Marking blue S AA AA A Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 35 V Forward current IF 100 mA Junction temperature TJ 150 °C Operating temperature range Top -55 ... 125 Storage temperature TStg -55 ... 150 1 Value Unit 2011-07-21 BA592/BA892... Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W BA592 ≤ 135 BA892, BA892-02V ≤ 120 BA892-02L ≤ 70 Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - - 1 V DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2011-07-21 BA592/BA892... Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 0.65 0.92 1.4 VR = 3 V, f = 1 MHz 0.6 0.85 1.1 - 1 - - 100 - VR = 0 V, f = 100 MHz Reverse parallel resistance RP kΩ VR = 0 V, f = 100 MHz Forward resistance Ω rf IF = 3 mA, f = 100 MHz - 0.45 0.7 IF = 10 mA, f = 100 MHz - 0.36 0.5 τ rr - 120 - ns I-region width WI - 3 - µm Insertion loss1) IL Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3mA, RL = 100 Ω dB IF = 0.1 mA, f = 1.8 GHz - 0.1 - IF = 3 mA, f = 1.8 GHz - 0.5 - IF = 10 mA, f = 1.8 GHz - 0.4 - VR = 0 V, f = 100 MHz - 23.5 - VR = 0 V, f = 470 MHz - 10.5 - VR = 0 V, f = 1 GHz - 5.5 - Isolation1) 1BA892-02L ISO in series configuration, Z = 50Ω 3 2011-07-21 BA592/BA892... Diode capacitance CT = ƒ (VR) Reverse parallel resistance RP = ƒ(VR) f = Parameter f = Parameter 10 3 2 KOhm 100 MHz pF Rp CT 10 2 1.2 10 1 1 GHz 1 MHz ... 1 GHz 0.8 10 0 0.4 0 0 5 10 15 V 20 10 -1 0 30 5 10 15 20 V 30 VR VR Forward resistance rf = ƒ (IF) Forward current IF = ƒ (VF) f = 100MHz TA = Parameter 10 2 10 0 A Ohm 10 -1 10 1 rf IF 10 -2 10 -3 10 0 10 -40 °C 25 °C 85 °C 125 °C -4 10 -5 10 -1 -2 10 10 -1 10 0 10 1 mA 10 10 -6 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2011-07-21 BA592/BA892... Insertion loss IL = -|S21|2 = ƒ(f) Isolation ISO = -|S21 |2 = ƒ(f) IF = Parameter VR = Paramter BA892-02L in series configuration, Z = 50Ω BA892-02L in series configuration, Z = 50Ω 0 0 dB |S21|2 |S21|2 dB 10 mA 3 mA 1 mA 0.1 mA -0.2 -10 0V 1V 10 V -15 -20 -0.3 -25 -0.4 0 0.5 1 1.5 2 GHz -30 0 3 f 0.5 1 1.5 2 GHz 3 f 5 2011-07-21 Package SC79 6 BA592/BA892... 2011-07-21 Package SCD80 BA592/BA892... Package Outline 0.2 M A +0.05 0.13 -0.03 0.8 ±0.1 0.2 ±0.05 10˚MAX. 1.7 ±0.1 1 0.3 ±0.05 Cathode marking 7˚ ±1.5˚ 1.3 ±0.1 A 2 0.7 ±0.1 0.35 1.45 Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63-02W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel Reel with 2 mm Pitch 2 0.2 2.5 8 1.45 Standard 4 Cathode marking 0.4 0.9 Cathode marking 7 0.7 2011-07-21 BA592/BA892... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 8 2011-07-21 Package SOD323 9 BA592/BA892... 2011-07-21 Package TSLP-2-1 10 BA592/BA892... 2011-07-21 BA592/BA892... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2011-07-21