IRF IRF7707PBF

PD-96024
IRF7707PbF
HEXFET® Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
ID
-20V
22mΩ@VGS = -4.5V
33mΩ@VGS = -2.5V
-7.0A
-6.0A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
1
8
D
7
2
3
G
4
1=
2=
3=
4=
D
S
S
G
6
S
5
8=
7=
6=
5=
D
S
S
D
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-7.0
-5.7
-28
1.5
1.0
0.01
±12
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
83
°C/W
1
01/04/06
IRF7707PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
–––
-0.45
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.012
14.3
18.9
–––
–––
–––
–––
–––
–––
31
6.4
10
11
54
134
138
2361
512
323
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
22
VGS = -4.5V, ID = -7.0A ‚
mΩ
33
VGS = -2.5V, ID = -6.0A ‚
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -7.0A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
47
ID = -7.0A
–––
nC
VDS = -16V
–––
VGS = -4.5V
17
VDD = -10V
81
ID = -1.0A
ns
201
RG = 6.0Ω
207
VGS = -4.5V ‚
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-28
–––
–––
–––
–––
142
147
-1.2
213
221
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V ‚
TJ = 25°C, I F = -1.5A
di/dt = -100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
ƒ When mounted on 1 inch square copper board, t < 10sec.
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7707PbF
100
100
VGS
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
VGS
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
10
-1.5V
1
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
-1.5V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150° C
10
TJ = 25 ° C
V DS= -15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100
1.5
10
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
1
1.0
1
4.0
2.0
ID = -7.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7707PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2800
Ciss
2100
1400
Coss
700
Crss
10
-VGS , Gate-to-Source Voltage (V)
3500
10
6
4
2
0
100
0
10
-VDS , Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
V DS=-16V
8
0
1
ID = -7.0A
1.6
1
0.1
10ms
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7707PbF
8.0
VDS
-ID , Drain Current (A)
VGS
6.0
RD
D.U.T.
RG
+
V DD
V GS
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
IRF7707PbF
0.120
0.080
0.040
ID = -7.0A
0.000
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.200
0.150
0.100
VGS = -2.5V
0.050
VGS = -4.5V
0.000
0
10
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
30
40
50
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
D.U.T.
QGS
+VDS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7707PbF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
5
D
6
ddd
C A B
A
A1
A2
BOTH SIDES
2X E/2
MO-153AA DIMENSIONS
b
c
6
E
E1
INDEX
MARK
e
B
5
MIN
---
0.05
---
0.15
.0020
---
.0472
.0059
0.80
0.19
1.00
---
1.05
0.30
.032
.0075
.039
---
.041
.0118
0.09
---
0.20
.0036
---
.0078
2.90
3.00
3.10
.115
.118
.122
E
E1
e
6.40 BS C
4.30
4.40
4.50
L
0.45
0°
bbb
ccc
ccc
4
0.65 BS C
0.60
0.75
0.25 BS C
---
ddd
e/2
MAX
D
L1
0
aaa
3X
INCHES
NOM
---
MILLIMET ERS
MAX
MIN NOM
----1.20
.251 BSC
.170
.173
.177
.0256
.0178
.0236
.0290
0°
.010 BSC
---
8°
8°
0.10
0.10
.0039
.0039
0.05
.0019
0.20
.0078
H
A2
A
8X b
C
bbb
A1
8X c
C A B
L1
aaa C
8 SURF
0
7
8X L
LEAD AS S IGNMENT S
NOTES
1. DIMENS IONING AND TOLERANCING PER AS ME Y14.5M-1994.
D
S
S
G
1
2
3
4
S INGLE
DIE
8
7
6
5
D
S
S
D
D1
S1
S1
G1
1
2
3
4
DUAL
DIE
8
7
D2
S2
2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES .
6
5
S2
G2
4 DAT UM PLANE H IS LOCATED AS S HOWN.
3. CONTROLLING DIMENS ION: MILLIMETER.
5 DAT UM A AND B TO BE DETERMINED AT DATUM PLANE H.
6 DIMENS IONS D AND E1 ARE MEAS URE D AT DATUM PLANE H.
7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING TO A S UBS TRAT E.
8. OUTLINE CONFORMS TO JEDEC OUT LINE M0-153AA.
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7
IRF7707PbF
TSSOP8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
PART NUMBER
7702
XXXXX
DAT E CODE (YWW)
LOT CODE
P (optional) = "Lead-Free"
YWW?P
AS S EMBLY S IT E CODE
TSSOP-8 Tape and Reel Information
Ø 13"
16 mm
16mm
8 mm
FEED DIRECT ION
NOT ES:
1. T APE & REEL OUT LINE CONF ORMS T O EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/06
8
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