IRF IRF5810

PD -94198
IRF5810
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
VDSS
Ω)
RDS(on) max (mΩ)
ID
-20V
90@VGS = -4.5V
-2.9A
135@VGS = -2.5V
-2.3A
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-2.9
-2.3
-11
0.96
0.62
0.008
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
130
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
6/6/01
IRF5810
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
5.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
60
87
–––
–––
–––
–––
–––
–––
6.4
1.2
1.7
8.2
14
62
53
650
110
86
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
90
VGS = -4.5V, ID = -2.9 ‚
mΩ
135
VGS = -2.5V, ID = -2.3A ‚
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -2.9A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, T J = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
9.6
ID = -2.9A
1.8
nC
VDS = -10V
2.6
VGS = -4.5V
–––
VDD = -10V ‚
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -4.5V
–––
VGS = 0V
–––
pF
VDS = -16V
–––
ƒ = 1kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.0
–––
–––
-11
–––
–––
–––
–––
110
130
-1.2
170
200
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.0A, VGS = 0V
TJ = 25°C, IF = -1.0A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on 1 in square Cu board
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF5810
100
100
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
1
-1.2V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
1
-1.2V
100
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (Α )
T J = 25°C
10.0
T J = 150°C
1.0
VDS = -15V
20µs PULSE WIDTH
2.0
2.5
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100.0
1.5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
1.0
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
TOP
3.0
ID = -2.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5810
VGS =
Ciss =
Crss =
Coss =
800
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
C, Capacitance (pF)
Ciss
600
400
200
Coss
10
-VGS , Gate-to-Source Voltage (V)
1000
ID = -2.9A
VDS = -16V
VDS = -10V
8
6
4
2
Crss
0
0
1
10
0
100
2
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
8
10
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-I D , Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100µsec
1
0.1
1.4
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0
10msec
1
10
100
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5810
3.0
RD
VDS
-ID , Drain Current (A)
2.5
VGS
D.U.T.
RG
-
2.0
+
VDD
VGS
1.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.10
R DS (on) , Drain-to-Source On Resistance ( Ω)
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF5810
0.09
0.08
0.07
0.06
ID = -2.9A
0.05
0.04
2.0
4.0
6.0
8.0
10.0
0.25
0.20
0.15
VGS = -2.5V
0.10
VGS = -4.5V
0.05
0.00
0
2
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate
Voltage
4
6
8
10
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF5810
60
1.0
50
0.9
40
ID = -250µA
0.8
Power (W)
-VGS(th) Gate threshold Voltage (V)
1.1
0.7
30
20
0.6
10
0.5
0
0.4
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 15. Threshold Voltage Vs. Temperature
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0.0001
0.0010
0.0100
0.1000
1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF5810
TSOP-6 Package Outline
TSOP-6 Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
T OP
PART NUMBER CODE REFERENCE:
A = S I3443DV
B = IRF5800
C = IRF5850
D = IRF5851
E = IRF5852
I = IRF5805
J = IRF5806
K = IRF5810
8
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET T ER
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
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IRF5810
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
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9