PD - 95506B
IRF5850PbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
VDSS = -20V
RDS(on) = 0.135Ω
Top View
Description
These P-channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5850 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-2.2
-1.8
-9.0
0.96
0.62
7.7
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
130
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
04/17/12
IRF5850PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
–––
–––
–––
–––
–––
–––
–––
–––
3.6
0.66
0.83
8.3
14
31
28
320
56
40
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250μA
––– V/°C Reference to 25°C, I D = -1mA
0.135
VGS = -4.5V, ID = -2.2A
Ω
0.220
VGS = -2.5V, ID = -1.9A
-1.2
V
VDS = VGS, ID = -250μA
–––
S
VDS = -10V, ID = -2.2A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
5.4
ID = -2.2A
–––
nC
VDS = -10V
–––
VGS = -4.5V
–––
VDD = -10V
–––
ID = -1.0A
ns
–––
R G = 6.0Ω
–––
VGS = -4.5V
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-0.96
-9.0
–––
–––
–––
–––
23
7.7
-1.2
35
12
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -0.96A, VGS = 0V
TJ = 25°C, IF = -0.96A
di/dt = -100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 5sec.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRF5850PbF
100
100
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM -1.2V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
1
-1.2V
0.1
20μs PULSE WIDTH
TJ = 25 ° C
0.01
0.1
1
10
10
1
-1.2V
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
1
V DS = -15V
20μs PULSE WIDTH
2.4
2.8
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
2.0
1
10
100
Fig 2. Typical Output Characteristics
10
1.6
20μs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
1.2
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
TOP
ID = -2.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5850PbF
500
10
400
-VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
Ciss
300
200
Coss
100
Crss
0
1
10
6
4
2
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
6
8
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
0.8
1.0
100us
1ms
1
TA = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.6
10
10ms
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-16V
VDS =-10V
8
0
100
ID = -2.2A
1.4
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5850PbF
2.5
RD
V DS
VGS
-ID , Drain Current (A)
2.0
D.U.T.
RG
-
+
VDD
1.5
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
0.0
tr
t d(off)
tf
VGS
25
50
75
100
125
10%
150
TJ , Junction Temperature (°C)
90%
Fig 9. Maximum Drain Current Vs.
Junction Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.24
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF5850PbF
0.20
0.16
ID = -2.2A
0.12
0.08
2.0
3.0
4.0
5.0
6.0
7.0
0.40
0.30
VGS = -2.5V
0.20
VGS = -4.5V
0.10
0
2
-V GS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
4
6
8
10
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2μF
.3μF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF5850PbF
24
1.0
16
0.8
ID = -250μA
Power (W)
-VGS(th) , Variace ( V )
20
12
8
0.6
4
0
0.4
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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0.001
0.010
0.100
1.000
10.000
Time (sec)
Fig 15. Typical Power Vs. Time
7
IRF5850PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
W = (1-26) IF PRECEDE D BY LAS T DIGIT OF CALE NDAR YEAR
DATE CODE
Y = YEAR
W = WE EK
PART NUMBER
CU-WIRE INDICATOR
TOP
LOT
CODE
YE AR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
PART NUMBER CODE REFERENCE :
A = SI3443DV
B = IRF5800
C = IRF5850
D = IRF5851
E = IRF5852
F = IRF5801
I = IRF 5805
J = IRF5806
K = IRF 5810
L = IRF 5804
M = IRF5803
N = IRF5802
Notes:
-A line above the work week (as shown here) indicates Lead-Free
-A line below the part number (as shown here) indicates Cu-wire
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRE CEDED BY A LET TER
YE AR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRF5850PbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101N,Sepulveda blvd El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2012
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