Bulletin I25173 rev. C 03/03 ST303S SERIES Stud Version INVERTER GRADE THYRISTORS Features Center amplifying gate 300A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST303S Units 300 A 65 °C 471 A @ 50Hz 7950 A @ 60Hz 8320 A @ 50Hz 316 KA2s @ 60Hz 288 KA2s 400 to 1200 V tq 10 - 20 µs TJ - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM /V RRM www.irf.com case style TO-209AE (TO-118) 1 ST303S Series Bulletin I25173 rev. C 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 400 500 Type number 04 ST303S 08 800 900 12 1200 1300 50 Current Carrying Capability ITM Frequency ITM ITM o 180 el 180oel Units 100µs 50Hz 400Hz 670 480 470 330 1050 1021 940 710 5240 1800 4300 1270 1000Hz 230 140 760 470 730 430 2500Hz 35 - 150 - 90 - Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 V DRM V DRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 40 65 40 65 40 65 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter I T(AV) ST303S Units Conditions Max. average on-state current 300 A @ Case temperature 65 °C 180° conduction, half sine wave I T(RMS) Max. RMS on-state current 471 DC @ 45°C case temperature I TSM Max. peak, one half cycle, 7950 t = 10ms non-repetitive surge current 8320 I 2t Maximum I2t for fusing reapplied 6690 t = 10ms 100% VRRM 7000 t = 8.3ms reapplied Sinusoidal half wave, 316 t = 10ms No voltage Initial TJ = TJ max 288 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2s 204 I √t 2 2 Maximum I √t for fusing 2 No voltage t = 8.3ms 224 A 3160 KA √s 2 t = 0.1 to 10ms, no voltage reapplied www.irf.com ST303S Series Bulletin I25173 rev. C 03/03 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 ST303S Units 2.16 1.44 V 0.57 rt2 High level value of forward slope resistance 0.56 IH Maximum holding current 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.46 Low level value of forward slope resistance Conditions ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current ST303S 1000 td Typical delay time 0.80 tq Max. turn-off time 10 - 20 Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt = 200V/µs Blocking Parameter ST303S Units Conditions TJ = TJ max, linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA ST303S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms 200 mA 3 V TJ = 25°C, VA = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 TJ = TJ max, rated VDRM applied 3 ST303S Series Bulletin I25173 rev. C 03/03 Thermal and Mechanical Specifications Parameter ST303S TJ Max. junction operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 Units °C RthJC Max. thermal resistance, junction to case 0.10 RthCS Max. thermal resistance, case to heatsink 0.03 T Mounting torque, ± 10% 48.5 Nm (425) (Ibf-in) 535 g wt Approximate weight Case style Conditions DC operation K/W Mounting surface, smooth, flat and greased TO-209AE (TO-118) Non lubricated threads See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.011 Conditions 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 K/W TJ = TJ max. Ordering Information Table Device Code ST 30 3 S 12 P F K 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 9 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 4 dv/dt - tq combinations available dv/dt (V/µs) 200 tq(µs) up to 800V 10 20 FN FK tq(µs) only for 1000/1200V 20 FK www.irf.com ST303S Series Bulletin I25173 rev. C 03/03 Outline Table CERAMIC HOUSING 22 (0.87) MAX. 4.5 (0.18) MAX. MI N. 9. 5( 0 .3 7) MI N. 4.3 (0.17) DIA. WHITE GATE RED SILICON RUBBER 245 (9.65) ± 10 (0.39) FLEXIBLE LEAD RED CATHODE WHITE SHRINK C.S. 50mm 2 (0.078 s.i.) Fast-on Terminals AMP. 280000-1 REF-250 47 (1.85) MAX. 21 (0.82) MAX. RED SHRINK MAX. 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. 27.5 (1.08) 22 ( 0.8 6) 10.5 (0.41) NOM. SW 45 3/4"16 UNF-2A 49 (1.92) MAX. Case Style TO-209AE (TO-118) All dimensions in millimeters (inches) 130 ST303SSeries RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 90 30° 60° 80 90° 120° 70 180° 60 0 50 100 150 200 250 300 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com 350 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) * FOR METRIC DEVICE: M24 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY 130 ST303SSeries RthJC (DC) = 0.10 K/ W 120 110 100 Conduction Period 90 80 70 30° 60° 60 90° 120° 50 180° DC 40 0 100 200 300 400 500 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 ST303S Series 600 R 0.5 K / ta el -D 100 ST303SSeries TJ = 125°C W K/ Conduction Angle 01 0. 200 K/ W 0. 08 K/ 0.1 W 2K /W 0.1 6K /W 0.2 K/ W 0.3 K/ W = RMSLimit 300 W K/ 400 0. 06 SA 180° 120° 90° 60° 30° 500 h R t 03 0. Maximum Average On-state Power Loss (W) Bulletin I25173 rev. C 03/03 W 0 0 50 100 150 200 250 300 25 Average On-state Current (A) 50 75 100 125 Maximum Allowab le Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 900 DC 180° 120° 90° 60° 30° 800 700 600 R th S A = 0. 0. 03 01 K/ K/ W W 0.0 -D 6K el /W ta 500 0.1 2 400 RMSLimit 300 Conduction Period 200 ST303SSeries TJ = 125°C 100 R K/ W 0.2 K/ W 0.3 K/ W 0.5 K/ W 0 0 50 100 150 200 250 300 350 400 450 500 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 7000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST303S Series 3500 3000 1 10 100 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-repetitive Surge Current 6 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Fig. 4 - On-state Power Loss Characteristics 8000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 7000 Initial TJ = 125°C No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 7500 5500 5000 4500 4000 ST303SSeries 3500 3000 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-repetitive Surge Current www.irf.com ST303S Series Bulletin I25173 rev. C 03/03 Transient Thermal Impedance Z thJC (K/ W) Instantaneous On-state Current (A) 10000 1000 TJ = 25°C TJ = 125°C ST303S Series 100 1 2 3 4 5 6 7 8 1 Steady State Value R thJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST303S Series 0.001 0.001 I TM 300 280 260 = 500 A 300 A 200 A 100 A 50 A 240 220 200 180 160 ST303S Series TJ = 125 °C 140 120 100 80 10 20 30 40 50 0.1 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Fig. 7 - On-state Voltage Drop Characteristics 320 0.01 Square Wave Pulse Duration (s) Instantaneous On-state Voltage (V) 60 70 80 90 100 180 ITM = 500 A 300 A 200 A 100 A 50 A 160 140 120 100 80 ST303S Series TJ = 125 °C 60 40 20 10 Rate Of Fall Of On-state Current - di/ dt (A/ µs) 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 1000 1E3 500 400 200 100 1000 1500 Snubb er circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 2000 1E2 2500 1E2 1E3 1E1 1E4 1E 4 1E1 500 400 200 50 Hz ST303SSeries Sinusoidal pulse TC = 65°C tp 1E2 100 Snubb er circuit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 1500 ST303SSeries Sinusoidal pulse TC = 40°C tp 1E1 1E1 50 Hz 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics www.irf.com 7 ST303S Series Bulletin I25173 rev. C 03/03 Peak On-state Current (A) 1E4 1E3 500 400 200 100 50 Hz 400 1000 2000 Snub ber c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 2500 1E1 ST303SSeries Trapezoidal pulse TC = 40°C di/ dt = 50A/ µs 1E0 1E1 1E2 50 Hz 1000 Snub ber c ircuit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 1500 1E2 100 200 500 2000 1E4 1E1 1E41E1 1E3 ST303SSeries Tra pezoidal pulse TC = 65°C di/ dt = 50A/ µs 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 400 200 100 50 Hz 500 1000 Snub ber circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 2000 1E1 100 50 Hz 500 1000 1500 1E2 200 400 Snub ber c irc uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 2500 tp 1E0 1E1 2000 ST303SSeries Trapezoidal pulse TC = 40°C di/ dt = 100A/ µs 1E2 tp 1E1 1E4 1E41E1 1E3 ST303SSeries Tra pezoidal pulse TC = 65°C di/ dt = 100A/ µs 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Peak On-state Current (A) 1E5 tp ST303SSeries Rec ta ngular pulse d i/d t = 50A/ µs 20 joules p er pulse 1E4 3 5 10 20 joules p er pulse 10 2 1 1E3 5 2 0.5 3 1 0.4 0.5 1E2 ST303SSeries Sinusoidal pulse tp 1E1 1E1 0.4 1E2 1E3 Pulse Basewidth (µs) 1E 1E4 1E 4 1E 11 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST303S Series Bulletin I25173 rev. C 03/03 100 Instantaneous Gate Voltage (V) Rec tangular gate pulse a) Rec ommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms (a) (b) Tj=25 °C Tj=-40 °C Tj=125 °C 1 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST303S Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03 www.irf.com 9