IRF IRHLUB730Z4

PD - 95813B
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
IRHLUB770Z4
60V, N-CHANNEL
TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHLUB770Z4 100K Rads (Si) 0.55Ω
ID
0.8A
IRHLUB730Z4 300K Rads (Si)
0.8A
0.55Ω
UB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available IRHLUB7970Z4
n Available on Tape & Reel
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
0.8
0.5
3.2
0.6
0.0045
±10
2.0
0.8
0.06
4.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
43 (Typical)
mg
For footnotes refer to the last page
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1
09/09/04
IRHLUB770Z4
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Min
Drain-to-Source Breakdown Voltage
60
∆BV DSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
1.0
gfs
Forward Transconductance
0.23
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
—
V
V GS = 0V, ID = 250µA
0.07
—
V/°C
Reference to 25°C, ID = 1.0mA
—
0.55
Ω
VGS = 4.5V, ID = 0.5A
—
—
—
—
2.0
—
1.0
10
V
S (Ω)
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.4
100
-100
3.6
1.5
1.8
8.0
10
26
10
—
Ciss
Coss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
166
42
3.5
12
—
—
—
—
Gate Resistance
Test Conditions
—
nA
nC
ns
nH
Ã
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 0.5A Ã
V DS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.8A
VDS = 30V
VDD = 30V, ID = 0.8A,
VGS = 5V, RG = 24Ω
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 5.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
0.8
3.2
1.2
70
75
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 0.8A, VGS = 0V Ã
Tj = 25°C, IF = 0.8A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJA
Junction-to-Case
Min Typ Max Units
—
—
220
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLUB770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions ˆ
V
µA
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS=0V
0.55
Ω
VGS = 4.5V, ID = 0.5A
—
0.55
Ω
VGS = 4.5V, ID = 0.5A
—
1.2
V
VGS = 0V, I D = 0.8A
Upto 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (UB)
„
Diode Forward Voltage
Min
Max
60
1.0
—
—
—
—
2.0
100
-100
1.0
—
nA
1. Part numbers IRHLUB770Z4, IRHLUB730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
(µm)
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-2V
-4V
-5V
-6V
-7V
-8V
-10V
20
37.3
285
36.8
60
60
60
60
60
35
30
I
59.9
345
32.7
60
60
60
60
60
20
15
-
Au
82.3
357
28.5
60
60
60
60
-
-
-
-
VDS
Br
70
60
50
40
30
20
10
0
Br
I
Au
0
-2
-4
-6
-8
-10
-12
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLUB770Z4
Pre-Irradiation
10
10
VGS
15V
10V
5.0V
3.5V
3.0V
2.5V
2.25V
BOTTOM 2.0V
VGS
15V
10V
5.0V
3.5V
3.0V
2.5V
2.25V
BOTTOM 2.0V
1
2.0V
0.1
60µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
2.0V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.01
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
2.0
T J = 25°C
VDS = 25V
15
60µs PULSE WIDTH
2
2.5
3
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
T J = 150°C
1.5
100
Fig 2. Typical Output Characteristics
10
0.1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
1
ID = 0.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
200
Ciss
150
Coss
100
50
12
VGS , Gate-to-Source Voltage (V)
250
IRHLUB770Z4
ID = 0.8A
VDS = 48V
VDS = 30V
VDS = 12V
10
8
6
4
2
Crss
0
0
1
10
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
4
5
6
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
10
T J = 150°C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
T J = 25°C
1
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1
100µs
1ms
0.1
VGS = 0V
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.6
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHLUB770Z4
Pre-Irradiation
1.0
RD
VDS
VGS
I D , Drain Current (A)
0.8
D.U.T.
RG
0.6
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.4
Fig 10a. Switching Time Test Circuit
VDS
0.2
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
1
t2
0.1
0.00001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRHLUB770Z4
15V
L
VDS
D.U.T.
RG
IAS
VGS
20V
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
4
TOP
BOTTOM
ID
0.4A
0.5A
0.8A
3
2
1
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
4.5V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHLUB770Z4
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 6.3 mH
Peak IL = 0.8A, VGS = 10V
 ISD ≤ 0.8A, di/dt ≤ 130A/µs,
VDD ≤ 60V, TJ ≤ 150°C
10 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — UB
3.25 [.128]
2.92 [.115]
0.61 [.024]
0.41 [.016]
3X
2.74 [.108]
2.41 [.095]
0.96 [.038]
0.56 [.022]
3
2
1
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.42 [.056]
1.17 [.046]
2.01 [.079]
1.81 [.071]
PAD AS SIGNMENT S
NOT ES :
1. OUT LINE CONFORMS T O MIL-PRF-19500/255L
2. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
3. CONT ROLLING DIMENS ION: INCH.
1 = GAT E
2 = S OURCE
3 = DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2005
8
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