PD - 93856A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) IRHNA57163SE 130V, N-CHANNEL 4# TECHNOLOGY c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID@ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 75* 62 300 300 2.4 ±20 280 75 30 5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (for 5s) 3.3 (Typical) g * Current is limited by internal wire diameter For footnotes refer to the last page www.irf.com 1 08/08/01 IRHNA57163SE Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage 130 ∆BV DSS/∆T J Temp.Coefficient of Breakdown Voltage — RDS(on) Static Drain-to-Source On-State — Resistance — — VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 39 IDSS Zero Gate Voltage Drain Current — — — — 0.17 — V/°C — 0.0137 — 0.0135 Ω — 0.0135 — 4.0 V — — S( ) — 10 µA — 25 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 160 55 75 35 125 80 50 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5020 1490 116 — — — Test Conditions V VGS = 0V, ID = 1.0mA Ω nA nC Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 75A VGS = 12V, ID = 62A ➃ VGS = 12V, ID = 45A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 62A ➃ VDS = 104V ,VGS=0V VDS = 104V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 65V VDD = 65V, ID = 75A, VGS =12V, RG = 2.35Ω ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — 75* 300 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.2 300 4.1 V ns µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = 75A, VGS = 0V ➃ Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by internal wire diameter Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA57163SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Units Test Conditions V µA VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 104V, VGS= 0V 0.014 Ω VGS = 12V, ID = 45A — 0.0135 Ω VGS = 12V, ID = 45A — 1.2 V VGS = 0V, ID = 75A 100K Rads (Si) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage Min Max 130 2.0 — — — — 4.5 100 -100 10 — nA International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32.5 130 130 130 100 50 28.4 130 120 30 — — Energy (MeV) 309 341 350 150 VDS 120 Br 90 I 60 Au 30 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA57163SE Pre-Irradiation 1000 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 10 5.0V 1 20µs PULSE WIDTH T = 25 C 1 5.0V 10 10 100 I D , Drain-to-Source Current (A) TJ = 150 ° C 100 TJ = 25 ° C 1 V DS =15 50V 20µs PULSE WIDTH 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) 3.0 6 10 100 Fig 2. Typical Output Characteristics 1000 5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 ° J 1 0.1 VDS , Drain-to-Source Voltage (V) 10 20µs PULSE WIDTH T = 150 C ° J 0.1 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 75A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 8000 Ciss 6000 Coss 4000 Crss 2000 20 VGS , Gate-to-Source Voltage (V) 12000 C, Capacitance (pF) IRHNA57163SE 10 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 50 100 150 200 250 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(ON) 100 TJ = 150 ° C ID, Drain Current (A) ISD , Reverse Drain Current (A) VDS = 104V VDS = 65V VDS = 26V 16 0 1 ID = 75A 100 10 TJ = 25 ° C 1 0.1 0.2 100µs 10 1ms V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) 2.2 Tc = 25°C Tj = 150°C Single Pulse 10ms 1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com Fig 8. Maximum Safe Operating Area 5 IRHNA57163SE Pre-Irradiation 100 RD VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 80 D.U.T. RG + -VDD 60 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA57163SE 1 5V L VD S D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 500 TOP 400 BOTTOM ID 34A 60A 75A 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA57163SE Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 0.1 mH Peak IL = 75A, VGS = 12V ➂ ISD ≤ 75A, di/dt ≤ 280A/µs, VDD ≤ 130V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 8 www.irf.com