IRF IRHNA58260

PD - 91838C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA57260
200V, N-CHANNEL
R5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHNA57260 100K Rads (Si)
IRHNA53260 300K Rads (Si)
RDS(on)
0.038Ω
0.038Ω
ID
55A
55A
IRHNA54260
0.038Ω
55A
0.043Ω
55A
600K Rads (Si)
IRHNA58260 1000K Rads (Si)
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-2
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
55
35
220
300
2.4
±20
380
55
30
9.2
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (for 5s)
3.3 (Typical)
C
g
For footnotes refer to the last page
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1
11/19/99
IRHNA57260
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
200
—
—
V
VGS = 0V, ID = 1.0mA
—
0.22
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
2.0
40
—
—
—
—
—
—
—
—
0.038
0.040
Ω
4.0
V
—
S( )
10
µA
25
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
175
40
65
35
125
80
50
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7900
910
70
—
—
—
VGS = 12V, ID = 35A ➃
VGS = 12V, ID = 55A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A ➃
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 55A
VDS = 100V
Ω
nA
nC
VDD = 100V, ID = 55A,
RG = 2.35Ω
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
55
220
A
VSD
t rr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
450
7.0
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 55A, VGS = 0V ➃
Tj = 25°C, IF = 55A, di/dt ≥ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
1.6
0.42
—
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA57260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-2)
Diode Forward Voltage ➃
200
2.0
—
—
—
—
—
4.0
100
-100
10
0.039
—
0.038
—
1.2
200
1.5
—
—
—
—
Test Conditions
—
4.0
100
-100
10
0.044
nA
—
0.043
Ω
VGS = 12V, ID =35A
—
1.2
V
VGS = 0V, IS = 55A
V
µA
Ω
VGS = 0V, ID = 1.0mA
V GS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID =35A
1. Part numbers IRHNA57260, IRHNA53260 and IRHNA54260
2. Part number IRHNA58260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm2))
36.7
59.8
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
39.5
200
200
150
100
50
32.5
200
100
40
35
30
28.4
50
35
25
—
—
Energy
(MeV)
309
341
350
250
VDS
200
Br
I
Au
150
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA57260
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
5.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
5.0V
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
1000
TJ = 25 ° C
TJ = 150 ° C
100
10
5.0
V DS = 50V
15
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
ID = 55A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHNA57260
Pre-Irradiation
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
10000
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
Ciss
8000
6000
4000
Coss
2000
Crss
20
VGS , Gate-to-Source Voltage (V)
12000
ID = 55 A
15
10
5
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
0
100
1000
1000
TJ = 150 ° C
ID, Drain Current (A)
1
V GS = 0 V
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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200
250
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
10us
10
100us
1ms
1
TJ = 25 ° C
0.6
150
100
10
0.1
0.2
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
50
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
VDS = 160V
VDS = 100V
VDS = 40V
2.2
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA57260
Pre-Irradiation
60
VGS
50
I D , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-VDD
40
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHNA57260
Pre-Irradiation
1 5V
L
VD S
D .U .T.
RG
IA S
12V
20V
D R IV E R
+
- VD D
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
800
TOP
BOTTOM
600
400
200
0
25
V (B R )D S S
ID
25A
35A
55A
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA57260
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 0.25 mH
Peak IL = 55A, VGS = 12V
➂ ISD ≤ 55A, di/dt ≤ 120A/µs,
VDD ≤ 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
PAD ASSIGNMENTS
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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Data and specifications subject to change without notice.
11/99
8
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