IRF IRHNA67264

PD-96990
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-2)
IRHNA67264
250V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNA67264 100K Rads (Si)
RDS(on)
0.040Ω
ID
50A
IRHNA63264
0.040Ω
50A
300K Rads (Si)
SMD-2
International Rectifier’s R6 technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
TM
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
50
31.5
200
250
2.0
±20
240
50
25
4.1
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
3.3 (Typical)
g
For footnotes refer to the last page
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1
06/28/05
IRHNA67264
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
—
0.3
—
V/°C
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
—
—
0.040
Ω
VGS = 12V, ID = 31.5A
2.0
37
—
—
—
—
—
—
4.0
—
10
25
V
S( )
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 31.5A Ã
VDS = 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 50A
VDS = 125V
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Ω
BVDSS
Parameter
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.8
100
-100
220
50
70
35
70
80
15
—
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
6912
940
10.8
0.52
—
—
—
—
nA
nC
Test Conditions
Ã
VDD = 125V, ID = 50A,
VGS = 12V, RG = 2.35Ω
ns
nH
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
50
200
1.2
700
15
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 50A, VGS = 0V Ã
Tj = 25°C, IF = 50A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
0.5
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA67264
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Sourcee „
On-State Resistance (SMD-2)
„
Diode Forward Voltage
Units
Test Conditions ˆ
Min
Max
250
2.0
—
—
—
—
4.0
100
-100
10
µA
VGS = 0V, ID = 1.0mA
V GS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 200V, VGS= 0V
—
0.041
Ω
VGS = 12V, ID = 31.5A
—
0.040
Ω
VGS = 12V, ID = 31.5A
—
1.2
V
VGS = 0V, ID = 50A
V
nA
Part numbers IRHNA67264 and IRHNA63264
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
(µm)
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-17V
-20V
43
1217
112
250
250
250
250
100
50
Xe
Au
59
90
823
1480
66
80
250
75
250
75
250
-
50
-
-
-
VDS
Ag
300
250
200
150
100
50
0
Ag
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA67264
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
5.0V
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
1000
Pre-Irradiation
60µs PULSE WIDTH
Tj = 25°C
1
100
5.0V
60µs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
1
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 150°C
100
T J = 25°C
VDS = 50V
15 WIDTH
60µs PULSE
10
5
5.5
6
6.5
7
7.5
ID = 50A
2.5
2.0
1.5
1.0
0.5
VGS = 12V
0.0
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
14000
20
100KHz
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
8000
Ciss
6000
Coss
4000
Crss
2000
16
VDS = 50V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
50
1000
ID, Drain-to-Source Current (A)
1000
100
T J = 25°C
10
1
0.1
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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250
1.6
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
1
0.1
0.4
200
100
VGS = 0V
0.2
150
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 150°C
100
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
VDS = 200V
VDS = 125V
ID = 50A
VGS, Gate-to-Source Voltage (V)
12000
C, Capacitance (pF)
IRHNA67264
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA67264
Pre-Irradiation
50
RD
VDS
VGS
ID, Drain Current (A)
40
D.U.T.
RG
30
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA67264
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
500
TOP
400
BOTTOM
ID
22.4A
31.6A
50A
300
200
100
0
25
V(BR)DSS
50
75
100
125
150
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA67264
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.19mH
Peak IL = 50A, VGS = 12V
 ISD ≤ 50A, di/dt ≤ 900/µs,
VDD ≤ 250V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/2005
8
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