FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 31-JUL-2002 SUBJECT: ON Semiconductor Final Product/Process Change Notification #12457 TITLE: Final Notification - Qualification of Tesla for Rectifier T0-220 EFFECTIVE DATE: 29-Sep-2002 AFFECTED CHANGE CATEGORY: ON Semiconductor Assembly and Test Site AFFECTED PRODUCT DIVISION: Bipolar Discretes Products Div ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Mark Wasilewski <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or Barbara Matteson <[email protected]> FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office or Mike Schager <[email protected]> DISCLAIMER: Final Product/Process Change Notification (FPCN) - Final Notification completing the notification process. Distributed at least 60 days from the effective date of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: ON Semiconductor has qualified our Tesla Sezam facility as an additional assembly and test site for Rectifier T0-220AB and T0-220AC devices. This qualification affects Schottky and Ultrafast Rectifiers. Tesla Sezam, located in Rosnov, Czech Republic, has been making T0-220 products for 7 years. There will be no change to the form, fit, and function of the devices. Device parameters will continue to meet all Data Book specifications, and reliability will continue to meet or exceed ON Semiconductor standards. RELIABILITY DATA SUMMARY: MBR16100CT Schottky Package: T0220AB Reliability Test Results: Test Description Interval HTRB 1000 hrs H3TRB 1000 hrs Temp Cycle 1000 cyc Autoclave 96 hrs IOL 8572 cyc DPA 2 pcs Pass Physical Dimension 10 pcs Pass Terminal Strength 30 pcs Pass Solderability 32 pcs Pass Issue Date: 31 July, 2002 Test Lot 1 0/77 0/77 0/77 0/77 Interval 500 hrs 500 hrs 500 cyc 96 hrs 4286 cyc Test Lot 2 0/77 0/77 0/77 0/77 0/77 Page 1 of 3 Final Product/Process Change Notification #12457 MUR8100E Ultrafast Package: T0220AC Reliability Test Results: Test Description HTRB Temp Cycle Autoclave IOL Physical Dimension Interval 1000 hrs 1000 cyc 96 hrs 8572 cyc 10 pcs Pass Test Lot 3 0/77 0/77 0/77 0/77 Reliability Testing Conclusions: Test results meet all quality and reliability requirements. ELECTRICAL CHARACTERISTIC SUMMARY: For Electrical Characterization Data Summary see below. CHANGED PART IDENTIFICATION: Product assembled at Tesla will be identified by NL site code marking.. QUALIFICATION PLAN Qualification vehicle justification: Technology Qual Vehicle Voltage Justification Schottky MBR16100CT 100 Largest Rectifier die T0-220 Ultrafast MUR8100E 1000 Highest Rectifier voltage T0-220 MBR16100CT Schottky Package: T0220AB Qualification Plan: Test Conditions HTRB Vr=80V, Ta=90 degC, 1000 hrs. H3TRB Vr=80V, Ta=85 degC, RH=85%, 1000 hrs. Temp Cycle Air to Air, -65 to +150 C, 15 min dwell, 1000 cycles Autoclave Ta=121 C, RH= 100%, PSIg=15, 96 hrs. IOL Tj=125 C, 3.5 minutes on/off, 8572 cycles DPA After HTRB Physical Dimension Per T0-220AB; ON Semiconductor case #221A Terminal Strength MIL STD 750, 2036 Solderability MIL STD 750, 2026.10, JESD22 B-102 MUR8100E Ultrafast Package: T0220AC Qualification Plan: Test Conditions HTRB Vr=800V, Ta=150degC, 1000 hrs. Temp Cycle Air to Air, -65 to +150 C, 15 min dwell, 1000 cycles Autoclave Ta=121 C, RH= 100%, PSIg=15, 96 hrs. IOL Tj=125 C, 3.5 minutes on/off, 8572 cycles Physical Dimension Per T0-220AB; ON Semiconductor case #221B Issue Date: 31 July, 2002 Page 2 of 3 Final Product/Process Change Notification #12457 AFFECTED DEVICE LIST (WITHOUT SPECIALS): PART BYV32-200 BYW29-100 BYW29-200 BYW51-200 BYW80-100 BYW80-200 MBR10100 MBR1035 MBR1045 MBR1060 MBR1080 MBR1090 MBR1535CT MBR1545CT MBR1545CTP MBR16100CT MBR1635 MBR1645 MBR20100CT MBR20100CTP MBR20200CT MBR20200CTP MBR2030CTL MBR2045CT MBR2045CTP MBR2060CT MBR2080CT MBR2090CT MBR2090CTLFAJ MBR2515L MBR2535CT MBR2535CTL MBR2545CT MBR2545CTP MBR3045ST MBR4015CTL MBR735 MBR745 MSR1560 MSR860 MUR1510 MUR1515 MUR1520 MUR1540 MUR1550 MUR1560 MUR1610CT MUR1610CTR MUR1615CT MUR1620CT MUR1620CTR MUR1640CT MUR1650CT Issue Date: 31 July, 2002 MUR620CT MUR805 MUR810 MUR8100E MUR815 MUR820 MUR840 MUR860 MUR880E MURH840CT MURH860CT MUR1660CT MUR2020R Page 3 of 3 ON Semiconductor T0-220 Rectifier Qual at Tesla Page 1 of 2 MUR8100E Electrical Characterization Data Summary DC @ Temps, Trr, ESD, and Ifsm. Ir @ 1000V (Amps) MIN MAX MEDIAN AVERAGE STDEV Limit CPK Vf @ 8A (Volts) MIN MAX MEDIAN AVERAGE STDEV CPK Test3 Test1 25C Test2 Test3 1.00E-10 1.00E-10 4.00E-10 6.33E-08 7.06E-08 5.12E-07 9.30E-09 2.74E-06 4.66E-06 4.83E-07 4.70E-09 2.65E-09 3.10E-09 7.63E-08 3.94E-08 3.65E-09 1.20E-07 1.02E-07 3.12E-09 Test1 .-55C Test2 Test1 100C Test2 7.95E-08 6.61E-06 6.39E-06 7.57E-06 7.59E-05 6.94E-05 7.91E-05 1.93E-04 1.71E-04 1.87E-04 1.05E-06 1.68E-05 1.12E-05 1.31E-05 9.83E-05 1.25E-04 9.88E-05 2.63E-04 3.26E-04 2.49E-04 8.21E-08 9.15E-08 7.25E-06 7.64E-06 8.59E-06 8.17E-05 8.14E-05 8.91E-05 2.15E-04 2.06E-04 2.16E-04 3.35E-07 9.79E-08 1.90E-07 7.83E-06 7.80E-06 8.84E-06 8.31E-05 8.30E-05 8.91E-05 2.16E-04 2.12E-04 2.15E-04 5.28E-07 8.94E-07 7.36E-08 2.61E-07 1.98E-06 1.10E-06 1.14E-06 5.42E-06 1.25E-05 5.01E-06 1.49E-05 3.36E-05 1.51E-05 2.50E-05 - - - 2.50E-05 Test1 .-55C Test2 Test3 Test1 2.50E-05 9.20E+00 1.13E+02 3.17E+01 25C Test2 Test3 MIN MAX MEDIAN AVERAGE STDEV Limit CPK 150C Test2 Test3 Test1 175C Test2 Test3 - - - - - - 8.29E+01 1.50E+02 1.44E+02 - - - - - - 100C Test2 Test1 150C Test2 Test3 Test1 175C Test2 Test3 Test1 5.00E-04 Test1 Test3 1.80E+00 1.63E+00 1.59E+00 1.57E+00 1.45E+00 1.42E+00 1.33E+00 1.26E+00 1.23E+00 1.19E+00 1.15E+00 1.12E+00 1.13E+00 1.10E+00 1.08E+00 2.03E+00 1.99E+00 2.01E+00 1.75E+00 1.73E+00 1.73E+00 1.46E+00 1.45E+00 1.42E+00 1.30E+00 1.31E+00 1.27E+00 1.24E+00 1.24E+00 1.20E+00 1.92E+00 1.82E+00 1.68E+00 1.66E+00 1.60E+00 1.49E+00 1.39E+00 1.35E+00 1.29E+00 1.24E+00 1.21E+00 1.18E+00 1.18E+00 1.15E+00 1.13E+00 1.92E+00 1.82E+00 1.74E+00 1.66E+00 1.59E+00 1.53E+00 1.39E+00 1.35E+00 1.31E+00 1.24E+00 1.21E+00 1.19E+00 1.18E+00 1.16E+00 1.14E+00 6.53E-02 4.68E-02 3.33E-02 5.36E-02 2.73E-02 4.32E-02 2.53E-02 3.95E-02 3.41E-02 1.02E-01 1.27E-01 7.77E-02 8.80E-02 5.28E-02 3.90E-02 - - - 1.80E+00 1.80E+00 1.80E+00 - - - 1.50E+00 1.50E+00 1.50E+00 - - - - - - 9.63E-01 - - - 3.14E+00 2.21E+00 2.68E+00 - - - 8.86E-01 1.00E+00 (Control Cpk=6.80E-01) Trr (Nanosecs) 5.00E-04 5.00E-04 Test3 Test1 25C Test2 Test3 6.04E+01 6.23E+01 6.37E+01 6.67E+01 6.84E+01 7.21E+01 6.28E+01 6.44E+01 6.85E+01 6.30E+01 6.45E+01 6.82E+01 1.63E+00 1.53E+00 2.08E+00 1.00E+02 1.00E+02 1.00E+02 7.59E+00 7.71E+00 5.08E+00 ON Semiconductor T0-220 Rectifier Qual at Tesla Page 2 of 2 MUR8100E Electrical Characterization Data Summary DC @ Temps, Trr, ESD, and Ifsm tested in Phx Lab Capacitance (pF) Vr=1V, 1mHz Test1 104.4 114.7 109.8 109.2 3.1 MIN MAX MEDIAN AVERAGE STDEV Test1 ESD Machine Model Human Body Model Note: C is >400V, 3b is >8000V Class Class - Test1 25C Test2 107.2 112.8 108.0 108.7 1.7 25C Test2 C 3B 25C Test2 Test3 105.6 119.8 109.3 110.7 4.6 Test3 - Test3 Ifsm @Tj=25 degC (Amps) Halfwave, single phase, 60Hz MIN MAX MEDIAN AVERAGE STDEV derated to Tj=175 degC (Avrg-3s) x 0.67 159.1 168.7 166.2 164.4 4.7 100.8 168.4 177.8 168.6 170.4 3.9 106.3 168.5 177.9 168.7 171.4 4.4 100.0 ON Semiconductor T0-220 Rectifier Qual at Tesla Page 1 of 2 MBR16100CT Electrical Characterization Data Summary DC @ Temps, ESD, Ifsm, UIS, and Capacitance. Vf @ If=8A (Volts) Mean Std Dev Min Max Limit Cpk Vf@ If=16A (Volts) Mean Std Dev Min Max Limit Cpk Ir @ 100V (80V @ Tj=175) .-55 degC 25 degC 175 degC Test 1 Test 2 Test 3 Control Test 1 Test 2 Test 3 Control Test 1 Test 2 Test 3 Control Test 1 Test 2 Test 3 0.740 0.004 0.731 0.750 - 0.734 0.0044 0.725 0.745 - 0.736 0.0070 0.722 0.747 - 0.718 0.0130 0.694 0.742 - 0.724 0.002 0.720 0.729 0.740 2.19 0.712 0.0022 0.708 0.717 0.740 4.27 0.712 0.0033 0.705 0.717 0.740 2.83 0.706 0.0039 0.694 0.714 0.740 2.92 0.588 0.0020 0.584 0.592 0.600 2.08 0.577 0.0018 0.573 0.581 0.600 4.12 0.585 0.0037 0.579 0.593 0.600 1.33 0.577 0.0045 0.571 0.585 0.600 1.69 0.514 0.0023 0.509 0.518 - 0.507 0.0022 0.503 0.512 - 0.514 0.0040 0.506 0.522 - 0.504 0.0043 0.498 0.512 - Control Test 1 Test 2 Test 3 Control Test 1 Test 2 Test 3 Control Test 1 Test 2 Test 3 Control Test 1 Test 2 Test 3 0.901 0.007 0.886 0.910 - 0.880 0.0065 0.866 0.893 - 0.884 0.0098 0.861 0.897 - 0.862 0.0136 0.824 0.889 - 0.820 0.0027 0.813 0.827 0.840 2.43 0.801 0.0026 0.794 0.805 0.840 5.05 0.802 0.0029 0.795 0.807 0.840 4.43 0.802 0.0045 0.794 0.810 0.840 2.86 0.682 0.0027 0.678 0.689 0.690 0.950 0.670 0.0028 0.662 0.677 0.690 2.44 0.676 0.0036 0.670 0.684 0.690 1.30 0.665 0.0052 0.659 0.675 0.690 1.59 0.615 0.0030 0.610 0.622 - 0.604 0.0027 0.597 0.609 - 0.611 0.0038 0.604 0.619 - 0.599 0.0055 0.593 0.611 - Control Test 1 Test 3 Control Test 1 Test 3 Control Test 1 Test 3 Control Test 1 .-55 degC 25 degC .-55 degC Test 2 0.461 0.436 0.081 1.991 - 0.086 0.071 0.005 0.310 - 125 degC 25 degC nA Mean Std Dev Min Max Limit Cpk 125 degC Control 125 degC Test 2 uA 0.415 0.984 0.004 4.401 - 0.233 0.289 0.010 1.328 - Class Class Test 2 175 degC mA 0.683 0.045 0.575 0.795 100 737.82 0.593 0.055 0.454 0.678 100 607.94 0.719 0.100 0.593 0.998 100 331.62 1.040 0.322 0.570 1.411 100 102.35 Control Test 1 Test 2 Test 3 C 3B C 3B - - 25 degC ESD Machine Model Human Body Model Note: C is >400V, 3b is >8000V 175 degC 1.27 0.09 1.10 1.45 5.00 14.35 1.45 0.10 1.19 1.62 5.00 11.78 Test 2 Test 3 13.92 2.16 10.16 17.58 - 20.33 4.74 12.79 28.42 - mA 1.08 0.19 0.73 1.37 5.00 7.03 1.59 0.44 0.87 2.35 5.00 2.59 16.14 1.02 14.32 18.39 - 16.21 1.46 13.51 19.16 - ON Semiconductor T0-220 Rectifier Qual at Tesla Page 2 of 2 MBR16100CT Electrical Characterization Data Summary Ifsm @Tj=25 degC (Amps) Halfwave, single phase, 60Hz Mean Std Dev Min Max Cpk Spec 25 degC Control Test 1 Test 2 Test 3 253.8 10.5 231.1 262.3 3.3 150.0 292.5 4.6 290.0 300.0 10.3 150.0 300.0 0.0 300.0 300.0 #DIV/0! 150.0 293.0 4.8 290.0 300.0 9.9 150.0 UIS @ 10mH (units as noted) Control Mean Std Dev Min Max 9.50 0.09 9.31 9.68 ID Peak (A) Test 1 Test 2 9.12 0.25 8.49 9.32 8.70 0.77 7.27 9.34 Test 3 Control BVR (V) Test 1 Test 2 Test 3 Control 8.50 0.88 6.39 9.28 237.61 3.48 233.33 241.54 236.28 2.29 232.76 240.35 232.55 6.09 223.71 241.65 229.07 9.53 204.70 237.99 444.96 8.06 425.28 454.97 420.46 20.92 367.81 439.39 385.75 63.51 266.45 443.44 369.54 69.93 210.31 443.58 C @ 4V Test 1 Test 2 Test 3 Control C @ 30V Test 1 Test 2 Test 3 Control 471.0 6.5 463.3 486.3 471.5 9.0 460.3 490.2 188.3 1.0 186.9 191.4 185.6 3.3 180.3 192.9 184.5 3.6 179.7 192.6 106.5 0.8 105.7 108.9 Capacitance (pF) Control C @ 0V Test 1 Test 2 Test 3 Control Mean Std Dev Min Max 1405.4 6.7 1393.7 1422.7 1367.9 21.8 1332.5 1415.0 1372.7 28.5 1337.9 1424.9 480.6 2.4 476.9 487.3 1387.2 24.2 1348.1 1438.6 476.3 8.0 464.3 494.5 Measured Energy (mJ) Test 1 Test 2 Test 3 187.4 3.7 182.0 196.2 C @ 100V Test 1 Test 2 Test 3 105.5 2.4 101.8 109.8 104.2 2.4 101.3 109.5 106.2 2.8 103.1 113.5