^Eini-donduatoi ^Products., Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PNP Plastic Darlington Complementary Silicon Power Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • • • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication Choice of Packages — MJE700 and MJE800 series T0220AB, MJE700T and MJE800T MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJE700.T MJE800J MJE702 MJE703 MJE802 MJE803 Unit 60 80 Vdc 80 Vdc VCEO VCB VEB IG IB Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C 60 Vdc 4.0 Adc 0.1 Adc CASE 77 TO-220 40 0.32 50 0.40 PD TJ, Tstg Operating and Storage Junction Temperature Range 5.0 °C THERMAL CHARACTERISTICS Symbol Thermal Resistance, Junction to Case CASE 77 TO-220 Rejc 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT Watts W/°C -55to+150 Characteristic MJE700,T MJE702 MJE703 NPN MJE800,T MJE802 MJE803 Max Unit TO-225AA TYPE MJE700-703 MJE800-803 °C/W 3.13 2.50 50 40 TO-220ABg 30 a cc 20 TO-126 CASE 221A-06 TO-220AB MJE700T MJE800T 10 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating Quality Semi-Conductors 125 150 MJE700.T MJE702 MJE703 MJE80O.T MJE802 MJE803 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic | Min Max 60 80 — Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1 ) OC = 50 mAdc, IB = 0) MJE700.T, MJE800.T MJE702, MJE703, MJE802, MJE803 Collector Cutoff Current (VCE = 60 vdc, IB = o) (VCE = so vdc, IB = o) MJETOOJ, MJESOO.T MjE/oa, MJETOS, MJE802, MJESOS V(BR)CEO !CEO Vdc uAdc — 100 100 100 500 Collector Cutoff Current (VCB = Rated BVcEQ. !E = °) (VCB = Rated BVCEO, IE = 0, TC = 100°C) ICBO — Emitter Cutoff Current (VBE = 5.0 Vdc, Ic = 0) IEBO — 2.0 750 750 100 — uAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (lc = 1 .5 Adc, VCE = 3 -0 vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC = 1 .5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) Base-Emitter On Voltage (1) (IC = 1 .5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3-° Vdc) DYNAMIC CHARACTERISTICS hFE MJE700.T, MJE702, MJE800.T, MJE802 MJE703, MJE803 All devices Vdc VcE(sat) MJE700.T, MJE702, MJE800.T, MJE802 MJE703, MJE803 All devices — 2.5 2.8 3.0 Vdc vBE(on) MJE700J, MJE702, MJE800,T, MJE802 MJE703, MJE803 AN devices Small-Signal Current Gain (lc = 1.5 Adc, VCE = 3-° Vdc ' f - 1-°MHz) (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. — hfe 1.0 2.5 2.5 3.0