Product Overview MBR160: Schottky Barrier Rectifier, 60 V, 1.0 A For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes. Features • • • • Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction • • • • • • Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) MBR160G Pb-free Active Single 60 0.75 500 1 25 Axial Lead-2 Active Single 60 0.75 500 1 25 Axial Lead-2 Halide free MBR160RLG Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type