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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
Generic Copy
18-DEC-2002
SUBJECT: ON Semiconductor Final Product/Process Change Notification #12646
TITLE: Final Notification for Primarion to Phenitec Wafer Fab Transfer
EFFECTIVE DATE: 16-Feb-2003
AFFECTED CHANGE CATEGORY: Subcontractor Fab Site
AFFECTED PRODUCT DIVISION: Bipolar Discretes Products Div
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office
or Barbara Matteson <[email protected]>
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact Sales Office or Fred Marchesi <[email protected]>
DISCLAIMER:
Final Product/Process Change Notification (FPCN) - Final Notification completing the notification
process. Distributed at least 60 days from the effective date of the change. ON Semiconductor will
consider this change approved unless specific conditions of acceptance are provided in writing within
30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office.
DESCRIPTION AND PURPOSE:
This is the first of three FPCNs that will be issued to complete the changes stated in IPCN #12106 Initial Notification for Primarion to Phenitec Wafer Fab Transfer.
This notification applies only to the N Channel JFET Family. The specific device list is included
below.
In order to continue to fully support our customer's requirements for N-Channel JFET, the fabrication
of these devices is being moved from ON Semiconductor's current subcontractor wafer fab, Primarion
in Phoenix to a new subcontractor wafer fab, Phenitec in Japan. Phenitec has been a qualified wafer
fab for ON Semiconductor and has been supplying TMOS, Logic and Analog devices to ON
Semiconductor and has been manufacturing various packages for several years.
Issue Date: 18 December, 2002
Page 1 of 3
Final Product/Process Change Notification #12646
RELIABILITY DATA SUMMARY:
*Qual vehicle list
Qual Vehicle
-----------MMBFJ310LT1
Qual Plan:
TEST
--------Autoclave
Temperature
Cycle
Technology
-----------N-ch JFET
Reason Chosen
--------------------------------Large die(18X17 mils), medium
voltage(25V), Most complex, historical data,
CONDITIONS
-----------------------Ta=121DegC , RH=100%,
P=15 psig,
INTERVAL
-------0
96
Ta=65/+150DegC, Air to
0
Air, Dwell equal to or
500
greater than 15 Min.,
1000
Transfer equal to or less than 10 Min.
IOL
Ton=2 min, Toff=2min,
Ta=25 DegC
External
Visual
Equal to or greater
N/M
than Mid-Std-750, Method 2071
D.P.A
7500 cycles
15000 cycles
SIZE
----336
336
FAILURES
---------------0/336
0/336
336
336
336
0/336
0/336
0/336
336
336
0/336
0/336
100%
Random sample of good
N/M
Temp Cycle and H3TRB
devices per CDF-AEC-Q101-004 Section
6
Passed
Die Bond
(Die Shear)
In-process assembly
N/M
45
Passed
Wire Bond
(Pull)
In-process assembly
N/M
45
Passed
Bond Strength,
Ball Shear
In-process assembly
N/M
45
Passed
High Humidity
High Temp.
Reverse Bias
Ta=+85DegC, RH=85%
0
504
1008
336
336
336
0/336
0/336
0/336
High Temp.
Reverse Bias
Ta=+150DegC
0
504
1008
336
336
336
0/336
0/336
0/336
Electro Static
Discharge
Human Body Model &
Machine Models 1 & 2
N/M
42
Class 1C
Class A
ELECTRICAL CHARACTERISTIC SUMMARY: Data Available Upon Request.
CHANGED PART IDENTIFICATION: Not Applicable
Issue Date: 18 December, 2002
Page 2 of 3
Final Product/Process Change Notification #12646
AFFECTED DEVICE LIST (WITHOUT SPECIALS):
PART
2N3819
2N5457
2N5458
2N5485
2N5486
2N5486RLRP
2N5555
2N5638RLRA
2N5639
2N5639RLRA
BF245A
BF245B
BF256A
BFR30LT1
BFR31LT1
BSR58LT1
J110
J110RLRA
J111RL1
J111RLRA
J111RLRP
J112
J112RL1
J112RLRA
J309
J310
J310RLRP
J310ZL1
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
MMBF4416LT1
MMBF5457LT1
MMBF5484LT1
MMBFJ309LT1
MMBFJ310LT1
MMBFJ310LT3
MMBFU310LT1
MPF102
MPF4392
MPF4393
MPF4393RLRP
Issue Date: 18 December, 2002
Page 3 of 3