J309, J310 Preferred Device JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate −Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C Derate above = 25°C PD 350 2.8 mW mW/°C Junction Temperature Range TJ −65 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 GATE 2 SOURCE TO−92 CASE 29−11 STYLE 5 1 2 3 MARKING DIAGRAM J3xx AYWW G G J3xx = Device Code xx = 09 or 10 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 1 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: J309/D J309, J310 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS −25 − − Vdc − − − − −1.0 −1.0 nAdc mAdc −1.0 −2.0 − − −4.0 −6.5 12 24 − − 30 60 − − 1.0 − − 0.7 0.5 − − OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc, VDS = 0, TA = 25°C) (VGS = −15 Vdc, VDS = 0, TA = +125°C) IGSS Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) VGS(off) J309 J310 Vdc ON CHARACTERISTICS Zero −Gate −Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J309 J310 Gate−Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) VGS(f) mAdc Vdc SMALL− SIGNAL CHARACTERISTICS Common−Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J309 J310 mmhos Common−Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yos) − 0.25 − mmhos Common−Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Gpg − 16 − dB Common−Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yfs) − 12 − mmhos Common−Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yig) − 12 − mmhos 10000 8000 − − 20000 18000 − − 250 − − 13000 12000 − − − − 100 150 − − Common−Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) mmhos gfs J309 J310 Common−Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) gos Common−Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) mmhos gfg J309 J310 Common−Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) mmhos gog J309 J310 mmhos Gate−Drain Capacitance (VDS = 0, VGS = −10 Vdc, f = 1.0 MHz) Cgd − 1.8 2.5 pF Gate−Source Capacitance (VDS = 0, VGS = −10 Vdc, f = 1.0 MHz) Cgs − 4.3 5.0 pF en − 10 − nVń ǸHz FUNCTIONAL CHARACTERISTICS Equivalent Short−Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%. http://onsemi.com 2 J309, J310 ORDERING INFORMATION Device Shipping † Package J309 TO−92 J309G 1000 Units / Bulk TO−92 (Pb−Free) J310 TO−92 J310G 1000 Units / Bulk TO−92 (Pb−Free) J310RLRP TO−92 J310RLRPG 2000 Units / Tape & Ammo Box TO−92 (Pb−Free) J310ZL1 TO−92 J310ZL1G 2000 Units / Tape & Ammo Box TO−92 (Pb−Free) I D , DRAIN CURRENT (mA) 60 60 VDS = 10 V TA = −55°C 50 40 50 +25 °C IDSS +25 °C 40 30 20 10 −5.0 +150°C 20 +25 °C −55 °C 30 +150°C 10 −1.0 −4.0 −3.0 −2.0 ID − VGS, GATE−SOURCE VOLTAGE (VOLTS) IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS) 0 0 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) 70 70 IDSS, SATURATION DRAIN CURRENT (mA) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 35 30 TA = −55°C VDS = 10 V f = 1.0 MHz +25 °C 25 20 +150°C 15 +25 °C −55 °C 10 +150°C 5.0 0 5.0 4.0 3.0 2.0 1.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage Figure 2. Forward Transconductance versus Gate−Source Voltage http://onsemi.com 3 0 10 1.0 k 10 k 100 VGS(off) = −2.3 V = VGS(off) = −5.7 V = 1.0 k Yos 10 RDS CAPACITANCE (pF) Yfs Yfs 120 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 100 0.01 0 10 4.0 3.0 2.0 |S21|, |S11| |S12|, |S22| 0.85 0.45 0.060 1.00 2.4 0.79 0.39 Y11 1.8 Y21 12 1.2 0.73 0.33 0.048 0.98 VDS = 10 V ID = 10 mA TA = 25°C 0.024 0.94 S11 Y22 0.61 0.21 0.6 200 300 500 f, FREQUENCY (MHz) 700 q21, q11 180° 50° 0.012 0.92 S12 0.55 0.15 100 1000 q22 200 300 500 f, FREQUENCY (MHz) q11, q12 −20 ° 120° −40 ° 86° −40 ° 100° 85° −60 ° 80° −120 ° 84° −80 ° 60° 0 q11 q21 −20 ° q22 −60 ° −80 ° 30° −40 ° −100 ° 20° q12 q11 140° 130° 10° 0° 100 −140 ° VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q21 −60 ° q12 −160 ° 83° −100 ° 40° −180 ° 700 0.90 q21, q22 −20 ° q21 700 1000 Figure 6. Common−Gate S Parameter Magnitude versus Frequency q12, q22 −2 0° 87° 40° 0.036 0.96 0.67 0.27 Figure 5. Common−Gate Y Parameter Magnitude versus Frequency 150° 0 0 1.0 3.0 Y12 160° 5.0 S21 6.0 170° 6.0 S22 VDS = 10 V ID = 10 mA TA = 25°C 18 0 100 7.0 Figure 4. On Resistance and Junction Capacitance versus Gate−Source Voltage Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 24 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 3. Common−Source Output Admittance and Forward Transconductance versus Drain Current 30 9.0 −200 ° 82° 1000 −120 ° 20° 100 Figure 7. Common−Gate Y Parameter Phase−Angle versus Frequency VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q11 700 −80 ° −100 ° 1000 Figure 8. S Parameter Phase−Angle versus Frequency http://onsemi.com 4 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE (μ mhos) Yfs , FORWARD TRANSCONDUCTANCE μ ( mhos) J309, J310 J309, J310 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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