BSS 84 P SIPMOSī Small-Signal-Transistor Product Summary Feature VDS · P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated RDS(on) ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 Type Package Tape and Reel BSS 84 P PG-SOT-23 L6327:3000pcs/r. YBs BSS 84 P PG-SOT-23 L6433:10000pcs/r. YBs VPS05161 Marking Drain pin 3 Gate pin1 Source pin 2 Maximum Ratings, at TA = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -0.17 TA=70°C -0.14 I D puls Pulsed drain current Unit -0.68 TA=25°C EAS 2.6 Avalanche energy, periodic limited by Tjmax EAR 0.036 Reverse diode dv/dt dv/dt -6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W -55... +150 °C Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25W mJ kV/µs IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C TA=25°C T j , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 2.4 55/150/56 Page 1 2006-12-05 BSS 84 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 200 @ min. footprint - - 350 @ 6 cm 2 cooling area 1) - - 300 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) RthJA SMD version, device on PCB: Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =-250µA Gate threshold voltage, VGS = VDS ID=-20µA I DSS Zero gate voltage drain current µA VDS=-60V, VGS=0, TA =25°C - -0.1 -1 VDS=-60V, VGS=0, TA =125°C - -10 -100 I GSS - -10 -100 nA RDS(on) - 8 12 W RDS(on) - 5.8 8 Gate-source leakage current VGS=-20V, VDS=0 Drain-source on-state resistance VGS=-4.5V, ID=-0.14A Drain-source on-state resistance VGS=-10V, ID=-0.17A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.4 Page 2 2006-12-05 BSS 84 P Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.065 0.13 - S pF Dynamic Characteristics Transconductance gfs VDS£2*ID*RDS(on)max , ID=-0.14A Input capacitance Ciss VGS=0, VDS=-25V, - 15 19 Output capacitance Coss f=1MHz - 6 8 Reverse transfer capacitance Crss - 2 3 Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, - 6.7 10 Rise time tr ID=-0.14A, RG=25W - 16.2 24.3 Turn-off delay time td(off) - 8.6 12.9 Fall time tf - 20.5 30.8 - 0.25 0.37 - 0.3 0.45 - 1 1.5 V(plateau) VDD=-48V, ID=-0.17A - -3.42 - IS - - -0.17 A - - -0.68 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=-48V, ID=-0.17A VDD=-48V, ID=-0.17A, nC VGS=0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 Reverse recovery time trr VR=-30V, IF=lS, - 23 34 ns Reverse recovery charge Qrr diF/dt=100A/µs - 10 15 nC Rev 2.4 Page 3 -1.24 V 2006-12-05 BSS 84 P 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ³ 10 V 0.38 BSS 84 P BSS 84 P -0.18 W A 0.32 -0.14 0.24 ID P tot 0.28 -0.12 -0.1 0.2 -0.08 0.16 0.12 -0.06 0.08 -0.04 0.04 -0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 BSS 84 P -10 10 3 A 0 10 2 Z thJA tp = 170.0µs /I D -10 BSS 84 P K/W ID -10 160 °C TA = -1 RD o S( VD 1 ms S 10 1 n) D = 0.50 10 ms 0.20 0.10 -10 -2 10 0 0.05 single pulse 0.02 DC -10 -3 -1 -10 -10 0 -10 1 V 0.01 -10 2 s 10 4 tp VDS Rev 2.4 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 Page 4 2006-12-05 BSS 84 P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C parameter: VGS ; Tj = 25 °C BSS 84 P Ptot = 0.36W A 26 l W k j i h VGS [V] g a -2.5 -0.32 f ID -0.28 e -0.24 -3.5 d -4.0 e -4.5 f -5.0 -5.5 h -6.0 i -6.5 c -0.12 j -7.0 k -8.0 l a b c d e f 18 16 14 12 10 h i 8 -10.0 j k 6 l 4 V GS [V] = -0.04 2 a -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V 0 0 -5 a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g h i j -5.5 -6.0 -6.5 -7.0 ID 8 Typ. forward transconductance ID = f ( VGS ); |VDS |³ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.4 0.16 A S 0.3 0.12 g fs - ID 7 Typ. transfer characteristics 0.25 0.1 0.2 0.08 0.15 0.06 0.1 0.04 0.05 0.02 1 2 3 4 V 0 0 6 - VGS Rev 2.4 k l -8.0 -10.0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.38 VDS 0 0 g 20 b -0.08 0 0 -3.0 c d g -0.2 -0.16 b BSS 84 P 22 R DS(on) -0.4 0.04 0.08 0.12 0.16 A 0.22 -ID Page 5 2006-12-05 BSS 84 P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = -0.17 A, VGS = -10 V parameter: VGS = VDS 21 W BSS 84 P 2.4 V 18 98% 16 - V GS(th) R DS(on) 2 14 12 1.8 1.6 1.4 10 98% 1.2 8 4 0.8 2 0.6 -20 20 60 2% 1 typ 6 0 -60 typ. °C 100 0.4 -60 180 -20 20 60 100 TA °C 160 TA 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 2 -10 0 BSS 84 P A pF Ciss C IF -10 -1 Coss 10 1 -10 -2 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 V 20 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD - VDS Rev 2.4 -10 -3 0 Page 6 2006-12-05 BSS 84 P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (TA), parameter: VGS = f (QGate ) ID = -0.17 A , VDD = -25 V, RGS = 25 W parameter: ID = -0.17 A pulsed; Tj = 25 °C 3 -16 BSS 84 P V mJ V GS E AS -12 2 1.5 -10 0,2 VDS max 0,8 VDS max -8 -6 1 -4 0.5 -2 0 25 45 65 85 105 125 °C 165 0 0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5 QGate TA 15 Drain-source breakdown voltage V(BR)DSS = f (TA) BSS 84 P -72 V (BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 TA Rev 2.4 Page 7 2006-12-05 BSS 84 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 Page 8 2006-12-05