BXY42 HiRel Silicon PIN Diode T HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals Very low capacitance Hermetically sealed microwave package T1 Space Qualified ESA/SCC Detail Spec. No.: 5513/017 Type Variant No.s 01 to 02 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BXY42-T (ql) Marking - Ordering Code see below BXY42-T1 (ql) (ql) Quality Level: Pin Configuration Package 1 2 T 1 2 T1 P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG IMM RPD D HIR 1 of 5 V2, February 2011 BXY42 Maximum Ratings Parameter Symbol Reverse Voltage Peak Forward Current 1) Power Dissipation BXY42-T Values Unit VR 50 V IFM 5 A Ptot mW 2) 600 BXY42-T1 3) 350 Operating Temperature Range Top -55 to +175 °C Storage Temperature Range Tstg -65 to +175 °C Tsol +250 °C Junction Temperature Tj 175 °C Thermal Resistance Junction-Case Rth(j-c) Soldering Temperature 4) K/W 200 BXY42-T 350 BXY42-T1 Notes.: 1.) At tp = 1,0µs, Duty Cycle=0,001% 2.) At TCASE = 55 °C. For TCASE > 55 °C derating is required. 3.) At TCASE = 52,5 °C. For TCASE > 52,5 °C derating is required. 4.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have elapsed. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR1 - - 10 µA IR2 - - 5 nA VF - 0,97 1,1 V DC Characteristics Reverse Current 1 VR1=50V Reverse Current 2 VR2=40V Forward Voltage IF=100mA IFAG IMM RPD D HIR 2 of 5 V2, February 2011 BXY42 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. CT - 0,22 0,24 pF RF1 - 2 3,5 RF2 - 1 2,5 35 50 - ns AC Characteristics Total Capacitance VR=20V; f=1MHz Forward Resistance 1 f=100MHz, IF1=1mA Forward Resistance 2 f=100MHz, IF2=10mA Minority Carrier Lifetime L IF=10mA, IR=6mA, IR=3mA IFAG IMM RPD D HIR 3 of 5 V2, February 2011 BXY42 T Package Symbol B X1 A C Y1 A B C Y2 Millimetre min max 1,30 1,45 1,15 1,35 0,40 2 1 T1 Package X1 B Y1 A Y2 Symbol C D F G IFAG IMM RPD D HIR A B C D E F G H 2 1 E G H 4 of 5 Millimetre min max 1,30 1,45 1,15 1,35 0,40 0,10 0,50 0,30 0,06 0,10 5,50 0,40 0,60 V2, February 2011 BXY42 Edition 2011-02 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D HIR 5 of 5 V2, February 2011