Product Overview NGTB15N120FL2: IGBT 1200V 15A SOLAR/UPS For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 s Short Circuit Capability These are Pb-Free Devices Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB15N120FL2WG Pb-free NEW 1200 2 0.37 1.2 110 11 109 10 294 Yes 15 2 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO247