Product Overview

Product Overview
NGTB15N120FL2: IGBT 1200V 15A SOLAR/UPS
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co-packaged free wheeling diode with a low forward voltage.
Features
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 s Short Circuit Capability
These are Pb-Free Devices
Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTB15N120FL2WG
Pb-free
NEW
1200
2
0.37
1.2
110
11
109
10
294
Yes
15
2
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO247