Product Overview

Product Overview
NGTB25N120IHL: IGBT 1200V 25A FS1 Induction Heating
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT
is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode
with a low forward voltage.
Features
Benefits
• Low Saturation Voltage using Trench with Fieldstop
Technology
• Low Switching Loss
• Low Conduction Loss
• Reduces system Power Dissipation
Applications
End Products
• Induction Heating
• Consumer Appliances
• Soft Switching
• Rice Cooker
• Induction Cooktop
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
NGTB25N120IHLWG
Pb-free
Active
1200
1.85
0.8
25
1.7
Eon
Typ
(mJ)
Trr
Typ
(ns)
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
200
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
192
Yes
TO247-3