Product Overview NGTB30N60L2WG: N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V For complete documentation, see the data sheet Product Description NGTB30N60L2WG is an N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V. Features • • • • • • • • • IGBT VCE(sat)=1.4V(typ) [IC=30A, VGE=15V] IGBT IC=100A (Tc=25°C) IGBT tf=80ns(typ) Low switching loss in higher frequency applications Maximum junction temperature Tj=175°C Diode VF=1.7V(typ) [IF=30A] Diode trr=70ns(typ) 5µs short circuit capability Pb-Free, Halogen Free and RoHS Compliance Applications End Products • Power factor correction of white goods appliance • General purpose inverter • Solar PV • IH • UPS Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB30N60L2WG Pb-free Active 600 1.4 0.31 1.14 70 NA 166 5 225 Yes 30 1.7 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 NA TO247