Product Overview NGTB30N65IHL2: IGBT 650V 30A FS2 Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • • Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application TJmax = 175°C Soft, Fast Free Wheeling Diode Applications • Inductive Heating • Soft Switching Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) NGTB30N65IHL2WG Pb-free NEW 650 1.7 0.2 30 1.1 Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) 430 35 135 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 219 Yes TO247