Product Overview

Product Overview
NGTB30N65IHL2: IGBT 650V 30A FS2 Induction Heating
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co-packaged free wheeling diode with a low
forward voltage.
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
TJmax = 175°C
Soft, Fast Free Wheeling Diode
Applications
• Inductive Heating
• Soft Switching
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
NGTB30N65IHL2WG
Pb-free
NEW
650
1.7
0.2
30
1.1
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
430
35
135
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
219
Yes
TO247