Product Overview NGTB50N60L2: IGBT 600V 50A FS2 Low VCEsat For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 s Short-Circuit Capability These are Pb-Free Devices Applications • Motor Drive Inverters • Industrial Switching • Welding Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB50N60L2WG Pb-free Active 600 1.5 0.6 0.8 67 7.4 310 5 500 Yes 50 1.7 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO247