Product Overview

Product Overview
NGTB30N120L2: IGBT 1200V 30A FS2 Low VCEsat
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for motor driver applications. Incorporated into the device is a soft and
fast co-packaged free wheeling diode with a low forward voltage
Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for Low VCEsat
10 µs Short Circuit Capability
Applications
• Motor Drive Inverter
• Industrial Switching
• Welding
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTB30N120L2WG
Pb-free
Active
1200
1.7
1.4
4.4
450
32
310
10
534
Yes
30
1.5
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO247