Product Overview NGTB30N120L2: IGBT 1200V 30A FS2 Low VCEsat For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for Low VCEsat 10 µs Short Circuit Capability Applications • Motor Drive Inverter • Industrial Switching • Welding Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB30N120L2WG Pb-free Active 1200 1.7 1.4 4.4 450 32 310 10 534 Yes 30 1.5 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO247