Product Overview NGTG15N60S1: IGBT 600V 15A NPT For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Features • • • • Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications 5µs Short Circuit Capability Excellent Current versus Package Size Performance Density Applications End Products • Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control • White Goods Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) NGTG15N60S1EG Pb-free Active 600 1.5 0.35 0.55 15 Trr Typ (ns) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 88 5 117 No TO220-3