Product Overview

Product Overview
NGTG15N60S1: IGBT 600V 15A NPT
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction,
and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching
loss, the IGBT is well suited for motor drive control and other hard switching applications.
Features
•
•
•
•
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
5µs Short Circuit Capability
Excellent Current versus Package Size Performance Density
Applications
End Products
• Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
• White Goods
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
NGTG15N60S1EG
Pb-free
Active
600
1.5
0.35
0.55
15
Trr
Typ
(ns)
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
88
5
117
No
TO220-3