NGTG15N60S1E D

NGTG15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications.
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15 A, 650 V
VCEsat = 1.5 V
Features
•
•
•
•
•
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
5 ms Short Circuit Capability
Excellent Current versus Package Size Performance Density
This is a Pb−Free Device
C
Typical Applications
G
• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
E
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Symbol
Value
Unit
VCES
650
V
IC
C
A
30
15
Pulsed collector current, Tpulse limited by
TJmax
ICM
120
A
Gate−emitter voltage
VGE
$20
Power dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ v +150°C
tSC
5
ms
Operating junction temperature range
TJ
−55 to
+150
°C
Storage temperature range
Tstg
−55 to
+150
°C
Lead temperature for soldering, 1/8” from
case for 5 seconds
TSLD
260
°C
V
G
C
TO−220
CASE 221A
STYLE 9
E
MARKING DIAGRAM
W
117
47
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G15N60S1G
AYWW
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 5
1
Device
Package
Shipping
NGTG15N60S1EG
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NGTG15N60S1E/D
NGTG15N60S1EG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction to case, for IGBT
Rating
RqJC
1.06
°C/W
Thermal resistance junction to ambient
RqJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VCEsat
1.3
1.55
1.5
1.75
1.7
1.95
V
VGE = VCE , IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
10
−
−
200
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Forward Transconductance
VCE = 20 V, IC = 15 A
gfs
−
10.1
−
S
Cies
−
1950
−
Coes
−
70
−
Cres
−
48
−
Qg
−
88
−
Qge
−
16
−
Qgc
−
42
−
td(on)
−
65
−
tr
−
28
−
td(off)
−
170
−
tf
−
140
−
Eon
−
0.550
−
Turn−off switching loss
Eoff
−
0.350
−
Total switching loss
Ets
−
0.900
−
Turn−on delay time
td(on)
−
65
−
tr
−
28
−
td(off)
−
180
−
tf
−
260
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 15 A, VGE = 15 V
Gate to collector charge
pF
nC
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
Eon
−
0.650
−
Turn−off switching loss
Eoff
−
0.600
−
Total switching loss
Ets
−
1.250
−
ns
mJ
ns
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB15N60S1EG.
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2
NGTG15N60S1EG
TYPICAL CHARACTERISTICS
60
60
VGE = 17 V to 13 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
VGE = 11 V
50
40
30
20
VGE = 9 V
10
VGE = 7 V
0
0
1
2
3
5
4
6
7
VGE = 11 V
40
30
VGE = 9 V
20
10
VGE = 7 V
8
0
1
2
3
5
4
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
60
VGE = 17 V to 13 V
60
IC, COLLECTOR CURRENT (A)
TJ = −40°C
VGE = 11 V
50
40
30
20
VGE = 9 V
10
VGE = 7 V
0
0
1
2
3
4
5
TJ = 25°C
50
−40°C
150°C
40
30
20
10
0
7
6
0
8
2
4
6
8
10
12
14
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
10,000
IC = 30 A
2.5
2.0
Cies
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VGE = 17 V to 13 V
0
70
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
50
IC = 15 A
IC = 10 A
1.5
IC = 5 A
1.0
1000
100
Coes
0.5
Cres
0
−50
10
−20
10
40
70
100
130
160
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTG15N60S1EG
20
0.7
15
VCES = 480 V
10
5
0.5
Eoff
0.4
0.3
VCE = 400 V
VGE = 15 V
IC = 15 A
RG = 22 W
0.2
0.1
0
0
0
10
20
30
40
50
60
80
70
0
90 100
20
40
60
80
100
120
140
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Switching Loss vs. Temperature
160
1.4
1000
SWITCHING LOSS (mJ)
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
RG = 22 W
1
0
20
40
VCE = 400 V
VGE = 15 V
TJ = 150°C
RG = 22 W
1.2
tf
SWITCHING TIME (ns)
Eon
0.6
SWITCHING LOSS (mJ)
VGE, GATE−TO−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.0
Eon
Eoff
0.8
0.6
0.4
0.2
0
60
80
100
8
140 160
120
12
16
20
24
28
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 9. Switching Time vs. Temperature
Figure 10. Switching Loss vs. IC
32
1.2
1000
Eon
VCE = 400 V
VGE = 15 V
IC = 15 A
TJ = 150°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
tf
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
RG = 22 W
1
8
12
16
20
24
28
0.9
Eoff
0.6
0.3
0
32
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Switching Time vs. RG
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4
75
85
NGTG15N60S1EG
TYPICAL CHARACTERISTICS
1.2
1000
VGE = 15 V
IC = 15 A
RG = 22 W
TJ = 150°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
tf
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
TJ = 150°C
1
5
15
25
35
45
55
65
75
Eoff
0.6
0.3
0
85
175
225
275
325
375
425
475
525
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. RG
Figure 14. Switching Loss vs. VCE
575
1000
IC, COLLECTOR CURRENT (A)
1000
tf
td_off
100
td_on
tr
10
VGE = 15 V
IC = 15 A
RG = 22 W
TJ = 150°C
1 ms
175 225
275
325
375
425
475
525
50 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
1
575
100 ms
100
0.01
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
0.9
Eon
100
10
1
0.1
VGE = 15 V, TC = 125°C
0.01
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
Figure 17. Reverse Bias Safe Operating Area
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5
1000
NGTG15N60S1EG
TYPICAL CHARACTERISTICS
THERMAL RESPONSE (ZqJC)
10
1
0.1
RqJC = 1.06
50% Duty Cycle
Ri (°C/W)
20%
10%
5%
Junction R1
C1
1%
Single Pulse
0.001
0.000001
Rn
C2
Cn
Case
Ci = ti/Ri
2%
0.01
R2
0.00001
ti (sec)
0.1
0.5010
0.15051
0.33992
0.10550
7.1E−5
1.0E−4
0.002
0.003
0.00999
0.20020
0.03
0.11423
0.1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
Figure 19. Test Circuit for Switching Characteristics
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6
10
100
1000
NGTG15N60S1EG
Figure 20. Definition of Turn On Waveform
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7
NGTG15N60S1EG
Figure 21. Definition of Turn Off Waveform
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8
NGTG15N60S1EG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 9:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
COLLECTOR
EMITTER
COLLECTOR
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NGTG15N60S1E/D