Product Overview

Product Overview
NGTB60N65FL2: IGBT 650V 60A Field Stop 2 IGBT
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
Tjmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5µs Short-Circuit Capability
These are Pb-Free Devices
Applications
End Products
• Half bridge inverter
• T-Type inverter
• I-Type inverter
• Uninterrupted Power supplies (Offline UPS and Online UPS)
• Solar Inverters / PV inverters
• Motor Control
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTB60N65FL2WG
Pb-free
NEW
650
1.64
0.66
1.59
96
6.8
318
5
595
Yes
60
2.13
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO247