Product Overview NGTB15N60S1: IGBT/w Diode 600V 15A NPT For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage. Features • • • • • • Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications Soft Fast Reverse Recovery Diode 5µs Short Circuit Capability Excellent Current versus Package Size Performance Density AC and DC Motor Control Applications End Products • Appliance Motor Control • General Purpose Inverter • White Goods Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB15N60S1EG Pb-free Active 600 1.5 0.35 0.55 270 5 88 5 117 Yes 15 1.65 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO220-3