Product Overview

Product Overview
NGTB15N60S1: IGBT/w Diode 600V 15A NPT
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction,
and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching
loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged
co-packaged reverse recovery diode with a low forward voltage.
Features
•
•
•
•
•
•
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
Soft Fast Reverse Recovery Diode
5µs Short Circuit Capability
Excellent Current versus Package Size Performance Density
AC and DC Motor Control
Applications
End Products
• Appliance Motor Control
• General Purpose Inverter
• White Goods
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTB15N60S1EG
Pb-free
Active
600
1.5
0.35
0.55
270
5
88
5
117
Yes
15
1.65
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO220-3