NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • • www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 75 A, 600 V VCEsat = 1.70 V EOFF = 1.0 mJ C Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 100 75 A C 100 75 Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V $30 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 75N60FL2 AYWWG W 595 265 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. June, 2015 − Rev. 4 E MARKING DIAGRAM Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) © Semiconductor Components Industries, LLC, 2015 TO−247 CASE 340L STYLE 4 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB75N60FL2WG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB75N60FL2W/D NGTB75N60FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.62 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCEsat 1.50 − 1.75 2.30 2.00 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − − 0.1 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7500 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 300 − Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Cres − 190 − Gate charge total Qg − 310 − Gate to emitter charge Qge − 60 − Qgc − 150 − td(on) − 110 − tr − 48 − td(off) − 270 − tf − 70 − Eon − 2.2 − Turn−off switching loss Eoff − 1.1 − Total switching loss Ets − 3.3 − Turn−on delay time td(on) − 100 − tr − 50 − td(off) − 280 − VCE = 480 V, IC = 75 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 75 A Rg = 10 W VGE = 0 V/ 15 V Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 75 A Rg = 10 W VGE = 0 V/ 15 V tf − 100 − Eon − 2.8 − Turn−off switching loss Eoff − 1.6 − Total switching loss Ets − 4.4 − VF 1.70 − 2.20 2.40 2.90 − Turn−on switching loss ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 75 A VGE = 0 V, IF = 75 A, TJ = 175°C TJ = 25°C IF = 75 A, VR = 400 V diF/dt = 200 A/ms TJ = 175°C IF = 75 A, VR = 400 V diF/dt = 200 A/ms V trr − 80 − ns Qrr − 0.40 − mC Irrm − 8 − A trr − 143 − ns Qrr − 1.45 − mC Irrm − 16 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB75N60FL2WG TYPICAL CHARACTERISTICS 200 VGE = 20 V to 13 V 180 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 160 140 11 V 120 100 10 V 80 60 40 9V 20 8V 7V 7 0 0 1 2 3 4 5 6 140 TJ = 150°C 120 11 V 100 10 V 80 60 9V 40 8V 7V 20 0 0 1 2 3 4 5 7 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 VGE = 20 V to 13 V TJ = −55°C IC, COLLECTOR CURRENT (A) 180 160 11 V 140 120 100 10 V 80 60 7V 40 9V 20 0 8V 0 1 2 3 4 5 6 7 140 120 100 80 60 40 TJ = 150°C 20 TJ = 25°C 0 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 2.50 100,000 TJ = 25°C IC = 75 A 2.00 IC = 50 A 1.50 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 13 V 160 8 200 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 15 V 180 IC = 25 A 1.00 0.50 0 −75 −50 −25 Cies 10,000 1000 Coes 100 Cres 10 1 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB75N60FL2WG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 40 30 20 TJ = 150°C 10 TJ = 25°C 0 0 0.5 1.0 1.5 10 8 6 4 VCE = 400 V VGE = 15 V IC = 75 A 2 2.5 3.0 3.5 0 4.0 50 100 250 200 150 300 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 350 1000 SWITCHING TIME (ns) Eon 2.5 SWITCHING LOSS (mJ) 12 0 2.0 3.0 2.0 Eoff 1.5 1.0 VCE = 400 V VGE = 15 V IC = 75 A Rg = 10 W 0.5 0 0 20 40 60 80 100 120 140 td(off) td(on) 100 tf tr VCE = 400 V VGE = 15 V IC = 75 A Rg = 10 W 10 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 5 SWITCHING TIME (ns) 6 SWITCHING LOSS (mJ) VCE = 400 V 14 Eon 4 3 Eoff 2 td(off) tf 100 td(on) tr VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1 0 15 25 35 45 55 65 75 85 95 10 105 15 25 35 45 55 65 75 85 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 95 105 NGTB75N60FL2WG TYPICAL CHARACTERISTICS 10,000 VCE = 400 V VGE = 15 V TJ = 150°C IC = 75 A SWITCHING LOSS (mJ) 12 10 SWITCHING TIME (ns) 14 Eon 8 6 Eoff 4 VCE = 400 V VGE = 15 V TJ = 150°C IC = 75 A td(off) 1000 td(on) tr tf 100 2 0 10 5 15 25 35 45 55 65 75 85 5 35 45 55 65 75 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 14. Switching Time vs. Rg 85 1000 5 Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 25 Figure 13. Switching Loss vs. Rg 6 4 3 Eoff 2 VGE = 15 V TJ = 150°C IC = 75 A Rg = 10 W 1 0 150 200 250 300 350 400 td(off) td(on) 100 tf tr VGE = 15 V TJ = 150°C IC = 75 A Rg = 10 W 10 450 500 550 600 650 150 200 250 300 350 400 450 500 550 600 650 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 15 100 50 ms dc operation 10 100 ms 1 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 100 10 VGE = 15 V, TC = 150°C 1 100 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB75N60FL2WG Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS trr, REVERSE RECOVERY TIME (ns) 150 130 TJ = 175°C, IF = 75 A 110 90 TJ = 25°C, IF = 75 A 70 50 300 500 700 900 1100 1300 TJ = 175°C, IF = 75 A 2.5 2.0 1.5 TJ = 25°C, IF = 75 A 1.0 0.5 0 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/m) diF/dt, DIODE CURRENT SLOPE (A/m) Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V) 50 1300 3.5 TJ = 175°C, IF = 75 A 40 VF, FORWARD VOLTAGE (V) Irm, REVERSE RECOVERY CURRENT (A) 100 3.0 30 20 TJ = 25°C, IF = 75 A 10 300 500 700 900 1100 IF = 75 A 2.5 IF = 50 A 2.0 IF = 25 A 1.5 1.0 −75 −50 −25 0 100 3.0 1300 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/m) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB75N60FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.282 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% R1 Junction R2 C1 0.001 0.000001 Case Ri (°C/W) Ci (J/°C) 0.0270 0.0243 0.0225 0.0554 0.1121 0.0409 0.0037 0.0130 0.0445 0.0571 0.0892 0.7725 Cn C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Rn 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 23. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.604 50% Duty Cycle 20% 0.1 10% 5% Junction R1 R2 Rn C1 C2 Cn Case 2% 0.01 Single Pulse Ri (°C/W) Ci (J/°C) 0.006394 0.007900 0.008527 0.025491 0.022800 0.121738 0.363338 0.000156 0.001266 0.003708 0.003923 0.013870 0.008214 0.275226 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 24. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 1 NGTB75N60FL2WG Figure 25. Test Circuit for Switching Characteristics www.onsemi.com 8 NGTB75N60FL2WG Figure 26. Definition of Turn On Waveform www.onsemi.com 9 NGTB75N60FL2WG Figure 27. Definition of Turn Off Waveform www.onsemi.com 10 NGTB75N60FL2WG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U L N 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K W J F 2 PL D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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