Product Overview BDV65B: 10 A, 100 V NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices. Features • High DC Current Gain HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built-in Base Emitter Shunt Resistors • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type BDV65BG Pb-free Active NPN 10 100 2 1 - - For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-247