BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDV65 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDV65A BDV65B VALUE VCBO 80 100 BDV65C 120 BDV65 60 BDV65A BDV65B UNIT 60 VCEO BDV65C 80 100 V V 120 V EBO 5 V IC 12 A ICM 15 A IB 0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDV65 V (BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter MAX BDV65A 80 BDV65B 100 BDV65C 120 IC = 30 mA IB = 0 VCB = 30 V IB = 0 BDV65 2 Collector-emitter V CB = 40 V IB = 0 BDV65A 2 cut-off current V CB = 50 V IB = 0 BDV65B 2 V CB = 60 V IB = 0 BDV65C VCB = 60 V IE = 0 BDV65 0.4 V CB = 80 V IE = 0 BDV65A 0.4 V CB = 100 V IE = 0 BDV65B 0.4 Collector cut-off V CB = 120 V IE = 0 BDV65C 0.4 current V CB = 30 V IE = 0 TC = 150°C BDV65 2 V CB = 40 V IE = 0 TC = 150°C BDV65A 2 V CB = 50 V IE = 0 TC = 150°C BDV65B 2 V CB = 60 V IE = 0 TC = 150°C BDV65C 2 VEB = 5V IC = 0 VCE = 4V IC = 5 A (see Notes 4 and 5) 20 mA IC = 5 A 4V breakdown voltage Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter IB = VCE = voltage Parallel diode IE = forward voltage 10 A (see Note 4) TYP UNIT 60 V mA 2 mA 5 mA (see Notes 4 and 5) 2 V IC = 5 A (see Notes 4 and 5) 2.5 V IB = 0 (see Notes 4 and 5) 3.5 V MAX UNIT 1 °C/W 35.7 °C/W 1000 NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance PRODUCT 2 INFORMATION MIN TYP BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS140AD 70000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 4 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS140AE 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5 1·0 0·5 20 TC = -40°C TC = 25°C TC = 100°C 0 0·5 1·0 IC - Collector Current - A 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS140AF VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 TC = -40°C TC = 25°C 2·5 TC = 100°C 2·0 1·5 1·0 0·5 0 0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 1·0 10 20 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 TC - Case Temperature - °C Figure 4. PRODUCT 4 INFORMATION 125 150 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT MDXXAW INFORMATION 5 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION