TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A SOT-9C PACKAGE (TO PVIEW) B C 1 C C y~~ *o O 3 b C Pin 2 is in electrical contact with the mounting base absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) BDV65 BDV65A BDV65B BDV65C VCBO Collector-emitter voltage (Ig = 0) BDV65 BDV65A BDV65B BDV65C VCEO Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds VALUE 60 80 100 120 60 80 100 120 VEBO 5 Ic 'CM IB 12 0,5 Plot 125 15 Pto. 3.5 Tj Tstg -65 to +150 -65 to +1 50 TL 260 NOTES; 1. This value applies for Ip < 0.1 ms. duty cycle < 10% 2. Derate linearly to 150"C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conducton is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors UNIT V V V A A A W W °C °c °c BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) TEST CONDITIONS PARAMETER Collector-emitter (BR)CEO breakc|oWn voltage ceo Collector-emitter cut-off current CBO Collector cut-off current EBO FE CE(sati 8E VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage (see Note 4) BDV65 BDV65A BDV65B TC = 150°C TC = 150°C ^ = 150^ TC = 150°C BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C l c = 30mA IB = 0 V CB = 30V V CB = 40V V C B = 50V VCB = 60 V V C B = 60V V CB = 80V V C B =100V VCB = 120V V CB = 30V VCE = 40V V C B = 50V V CB = 60V IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = ° IE = 0 IE = 0 IE = 0 IE = 0 VEB = 5V I 0 .0 VCE = 4V lc = 5 A (see Notes 4 and 5) 20 mA lc = 5 A VCE = 4V IE = 10 A IB = MIN TYP MAX 60 80 100 120 UNIT V 2 2 2 2 0.4 0.4 0.4 0.4 2 2 2 2 mA mA 5 mA (see Notes 4 and 5) 2 V lc = 5 A (see Notes 4 and 5) 2.5 V |B = ° (see Notes 4 and 5) 3.5 V 100O NOTES: 4. These parameters must be measured using pulse techniques, tj, = 300 us, duty cycle < 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER ReJC ReJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX UNIT 1 °c/w °c/w 35.7