BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDV65B V CBO 120 BDV65 60 BDV65B VCEO Continuous collector current 80 100 V V 120 BDV65C Emitter-base voltage 80 100 BDV65C BDV65A UNIT 60 BDV65 BDV65A VALUE VEBO 5 V IC 12 A ICM 15 A IB 0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W °C Peak collector current (see Note 1) Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDV65 V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter MAX BDV65A 80 BDV65B 100 BDV65C 120 IC = 30 mA IB = 0 VCB = 30 V IB = 0 BDV65 2 Collector-emitter VCB = 40 V IB = 0 BDV65A 2 cut-off current VCB = 50 V IB = 0 BDV65B 2 breakdown voltage (see Note 4) TYP V VCB = 60 V IB = 0 BDV65C VCB = 60 V IE = 0 BDV65 0.4 VCB = 80 V IE = 0 BDV65A 0.4 VCB = 100 V IE = 0 BDV65B 0.4 Collector cut-off VCB = 120 V IE = 0 BDV65C 0.4 current VCB = 30 V IE = 0 TC = 150°C BDV65 2 VCB = 40 V IE = 0 TC = 150°C BDV65A 2 VCB = 50 V IE = 0 TC = 150°C BDV65B 2 VCB = 60 V IE = 0 TC = 150°C BDV65C 2 VEB = 5V IC = 0 VCE = 4V IC = 5 A (see Notes 4 and 5) 20 mA IC = 5 A 4V Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IB = VCE = IE = 10 A UNIT 60 mA 2 mA 5 mA (see Notes 4 and 5) 2 V IC = 5 A (see Notes 4 and 5) 2.5 V IB = 0 (see Notes 4 and 5) 3.5 V 1000 NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 1 °C/W 35.7 °C/W JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS140AD 70000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 4 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS140AE 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 20 TC = -40°C TC = 25°C TC = 100°C 0 0·5 1·0 IC - Collector Current - A 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS140AF VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 TC = -40°C TC = 25°C 2·5 TC = 100°C 2·0 1·5 1·0 0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0 0·5 1·0 10 20 IC - Collector Current - A Figure 3. JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 ø 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5