Product Overview 2N6667: 10 A, 60 V PNP Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications. Features • • • • • • High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc Collector-Emitter Sustaining Voltage @ 200 mAdc VCEO(sus) = 60 Vdc (Min) 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668 Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type 2N6667G Pb-free Active PNP 10 60 2 1 20 20 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-220-3