Product Overview 2N6388: 10 A, 80 V NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. Features • High DC Current Gain hFE=2500 (Typ) @Ic=4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc Vceo(sus) = 60 Vdc (Min) - 2N6387 Vceo (sus) = 80 Vdc (Min) - 2N6388 • Collector-Emitter Sustaining Voltage - @ 100 mAdc Vceo(sus) = 60 Vdc (Min) - 2N6387 Vceo (sus) = 80 Vdc (Min) - 2N6388 • Low Collector-Emitter Saturation VoltageVce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc • Monolithic Construction with Built-In Base-Emitter Shunt Resistors • T0-220AB Compact Package • Epoxy meets UL94, VO @ 1/8 inch • ESD Ratings Machine Model C and Human Body Model 3B • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type 2N6387G Pb-free Active NPN 10 60 2 1 20 20 TO-220-3 2N6388G Pb-free Active NPN 10 80 2 1 20 20 TO-220-3 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016