ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain — • • • • • hFE = 3500 (Typ) @ IC = 4 Adc Collector–Emitter Sustaining Voltage — @ 200 mAdc VCEO(sus) = 60 Vdc (Min) — 2N6667 = 80 Vdc (Min) — 2N6668 Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc Monolithic Construction with Built–In Base–Emitter Shunt Resistors TO–220AB Compact Package Complementary to 2N6387, 2N6388 4 COLLECTOR 1 STYLE 1: PIN 1. 2. 3. 4. 2 BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A–09 TO–220AB BASE 8k 120 EMITTER Figure 1. Darlington Schematic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Emitter Voltage Symbol 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5 Vdc IC 10 15 Adc Base Current IB 250 mAdc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 watts W/C Total Device Dissipation @ TA = 25C Derate above 25C PD 2 0.016 Watts W/C TJ, Tstg –65 to +150 C Collector Current — Continuous — Peak Operating and Storage Junction Temperature Range (1) Indicates JEDEC Registered Data. Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 4 1 Publication Order Number: 2N6667/D 2N6667 2N6668 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.92 C/W Thermal Resistance, Junction to Ambient RθJA 62.5 C/W *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 — — Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N6667 2N6668 ICEO — — 1 1 mAdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N6667 2N6668 2N6667 2N6668 ICEX — — — — 300 300 3 3 µAdc IEBO — 5 mAdc hFE 1000 100 20000 — — Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) VCE(sat) — — 2 3 Vdc Base–Emitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) VBE(sat) — — 2.8 4.5 Vdc |hfe| Cob 20 — — — 200 pF hfe 1000 — — Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 5 Adc, VCE = 3 Vdc) (IC = 10 Adc, VCE = 3 Vdc) DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Small–Signal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz) *Indicates JEDEC Registered Data (2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. VCC - 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf 10 ns DUTY CYCLE = 1.0% RC V2 APPROX +8V TUT RB 51 0 V1 APPROX - 12 V D1 + 4.0 V 25 µs Figure 2. Switching Times Test Circuit http://onsemi.com 2 8k 120 SCOPE 2N6667 2N6668 PD, POWER DISSIPATION (WATTS) TA TC 4 80 3 10 7 5 3 60 2 40 1 20 t, TIME (s) µ TC TA tr 2 ts 1 0.7 0.5 0.3 0 20 40 60 80 100 T, TEMPERATURE (°C) 140 120 160 .td tf 0.2 0 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. Typical Switching Times Figure 3. Power Derating r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 0.2 0.1 0.05 0.2 0.1 ZθJC(t) = r(t) RθJC RθJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 0.05 0.03 0.02 0.02 0.01 0.01 0.01 P(pk) 0.02 t1 SINGLE PULSE 0.05 0.1 0.2 t2 DUTY CYCLE, D = t1/t2 0.5 1 2 5 t, TIME (ms) 10 20 50 100 200 500 1000 Figure 5. Thermal Response 20 IC, COLLECTOR CURRENT (AMPS) 100 µs 5 ms 10 5 3 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. dc 1 ms 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 TJ = 150°C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25°C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 5 2 3 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Maximum Safe Operating Area http://onsemi.com 3 2N6667 2N6668 300 5000 TJ = 25°C 2000 C, CAPACITANCE (pF) hFE , SMALL-SIGNAL CURENT GAIN 10,000 1000 500 TC = 25°C VCE = 4 VOLTS IC = 3 AMPS 200 100 50 1 2 3 5 7 10 20 30 50 70 100 70 f, FREQUENCY (kHz) 1 2 5 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Small–Signal Current Gain Figure 8. Typical Capacitance 7000 5000 3000 2000 VCE = 3 V TJ = 150°C TJ = 25°C 1000 700 500 300 200 0.1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10,000 hFE, DC CURRENT GAIN 100 30 0.1 200 300 500 1000 20,000 TJ = - 55°C 0.2 3 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMPS) 5 7 10 TJ = 25°C 2.2 IC = 2 A θV, TEMPERATURE COEFFICIENTS (mV/°C) 1 0.5 0.1 4A 6A 1.8 1.4 1 0.6 0.3 0.5 0.7 1 2 3 5 7 IB, BASE CURRENT (mA) 10 20 30 +5 TJ = 25°C 2 1.5 100 50 Figure 10. Typical Collector Saturation Region 3 2.5 0.2 2.6 Figure 9. Typical DC Current Gain V, VOLTAGE (VOLTS) Cob Cib 50 20 10 200 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 7 10 +4 *IC/IB ≤ +3 hFE@VCE 3.0V 3 25°C to 150°C +2 +1 -55°C to 25°C 0 -1 ∗θVC for VCE(sat) -2 -3 θVB for VBE -4 -5 0.1 0.2 0.3 25°C to 150°C -55°C to 25°C 0.5 0.7 1 2 3 5 7 IC, COLLECTOR CURRENT (AMP) Figure 11. Typical “On” Voltages Figure 12. Typical Temperature Coefficients http://onsemi.com 4 10 2N6667 2N6668 105 IC, COLLECTOR CURRENT (A) µ 104 103 REVERSE FORWARD VCE = 30 V 102 101 TJ = 150°C 100°C 100 10-1 +0.6 25°C +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 Figure 13. Typical Collector Cut–Off Region http://onsemi.com 5 2N6667 2N6668 PACKAGE DIMENSIONS TO–220 CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 6 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 2N6667 2N6668 Notes http://onsemi.com 7 2N6667 2N6668 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 2N6667/D