INFINEON BXY43P

HiRel Silicon PIN Diode
BXY 43P
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ Current controlled RF resistor for RF attenuators
and switches
¥ High reverse voltage
¥ Matched diode - pair
¥ Hermetically sealed microwave package
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5513/030
ESD:
FP
Electrostatic discharge sensitive device, observe handling precautions!
Type
BXY 43P-FP (ql)
Marking
-
Ordering Code
see below
Pin Configuration
Package
FP
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X164
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702X167
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Reverse voltage
VR
IF
Ptot
Top
Tstg
Tsol
Tj
Rth(j-c)
150
V
400
mA
500
mW
- 55 to + 150
°C
- 65 to + 175
°C
+ 235
°C
175
°C
100
K/W
Forward current
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
Semiconductor Group
1
Draft A02 1998-04-01
BXY 43P
Electrical Characteristics
Table 2
DC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Reverse current 1
VR1 = 150 V
IR1
-
-
100
nA
Reverse current 2
VR2 = 100 V
IR2
-
-
10
nA
Forward voltage
IF = 100 mA
VF
-
0.97
1
V
Table 3
AC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Total capacitance
VR = 50 V, f = 1 MHz
CT
0.4
0.6
0.85
pF
Forward resistance
f = 100 MHz, IF1 = 20 mA
RF1
-
55
70
W
Forward resistance
f = 100 MHz, IF2 = 1 mA
RF2
-
2.2
3.0
W
Forward resistance
f = 100 MHz, IF3 = 10 mA
RF3
-
0.9
1.5
W
Minority carrier lifetime
IF = 10 mA, IR = 6 mA, IR = 3 mA
tL
250
650
-
ns
Table 4
Matching Requirements at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Difference in forward resistance 2 1) RF2
-
-
15
%
Difference in forward resistance 3 1) RF3
-
-
15
%
1)
DRF [%] = 100 ´ (RF_Diode2 - RF_Diode1)/RF_Diode1
Semiconductor Group
2
Draft A02 1998-04-01
BXY 43P
Order Instructions
Full type variant including package variant and quality level must be specified by the
orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies
device family and quality level only.
Ordering Form:
Ordering Code: QÉ
BXY43P-(x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702X167
BXY43P-FP ES
For BXY43P in Flatpack Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: [email protected]
Semiconductor Group
3
Draft A02 1998-04-01
BXY 43P
Figure 1
FP Package
Symbol
Millimetre
min.
max.
B
3.10
3.55
B1
3.00
3.30
D
1.30
1.70
D1
0.55
0.65
d
0.10
0.15
d1
0.25
0.40
F
2.40
2.60
L
5.50
-
Semiconductor Group
4
Draft A02 1998-04-01