HiRel Silicon PIN Diode BXY 43P Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030 ESD: FP Electrostatic discharge sensitive device, observe handling precautions! Type BXY 43P-FP (ql) Marking - Ordering Code see below Pin Configuration Package FP (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X164 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702X167 (see Chapter Order Instructions for ordering example) Table 1 Maximum Ratings Parameter Symbol Limit Values Unit Reverse voltage VR IF Ptot Top Tstg Tsol Tj Rth(j-c) 150 V 400 mA 500 mW - 55 to + 150 °C - 65 to + 175 °C + 235 °C 175 °C 100 K/W Forward current Power dissipation Operating temperature range Storage temperature range Soldering temperature Junction temperature Thermal resistance junction-case Semiconductor Group 1 Draft A02 1998-04-01 BXY 43P Electrical Characteristics Table 2 DC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Reverse current 1 VR1 = 150 V IR1 - - 100 nA Reverse current 2 VR2 = 100 V IR2 - - 10 nA Forward voltage IF = 100 mA VF - 0.97 1 V Table 3 AC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Total capacitance VR = 50 V, f = 1 MHz CT 0.4 0.6 0.85 pF Forward resistance f = 100 MHz, IF1 = 20 mA RF1 - 55 70 W Forward resistance f = 100 MHz, IF2 = 1 mA RF2 - 2.2 3.0 W Forward resistance f = 100 MHz, IF3 = 10 mA RF3 - 0.9 1.5 W Minority carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA tL 250 650 - ns Table 4 Matching Requirements at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Difference in forward resistance 2 1) RF2 - - 15 % Difference in forward resistance 3 1) RF3 - - 15 % 1) DRF [%] = 100 ´ (RF_Diode2 - RF_Diode1)/RF_Diode1 Semiconductor Group 2 Draft A02 1998-04-01 BXY 43P Order Instructions Full type variant including package variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: QÉ BXY43P-(x) (ql) (x): Package Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702X167 BXY43P-FP ES For BXY43P in Flatpack Package; ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: [email protected] Semiconductor Group 3 Draft A02 1998-04-01 BXY 43P Figure 1 FP Package Symbol Millimetre min. max. B 3.10 3.55 B1 3.00 3.30 D 1.30 1.70 D1 0.55 0.65 d 0.10 0.15 d1 0.25 0.40 F 2.40 2.60 L 5.50 - Semiconductor Group 4 Draft A02 1998-04-01