HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BFY 183 (ql) - see below C Micro-X1 E B E (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1609 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1713 (see Chapter Order Instructions for ordering example) Table 1 Maximum Ratings Parameter Symbol Limit Values Unit Collector-emitter voltage VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg 12 V 20 V 20 V 2 V 65 mA 5 1) mA 450 mW 200 °C - 65 É + 200 °C - 65 É + 200 °C Rth JS < 255 K/W Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS £ 99 °C 2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2) 1) The maximum permissible base current for VFBE measurements is 20 mA (spot measurement duration < 1 s). 2) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Draft A03 1998-04-01 BFY 183 Electrical Characteristics Table 2 DC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Collector-base cutoff current VCB = 20 V, IE = 0 ICBO - - 100 mA Collector-emitter cutoff current VCE = 12 V, IB = 0.3 mA 3) ICEX - - 300 mA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 50 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 25 mA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 0.5 mA Base-emitter forward voltage IE = 30 mA, IC = 0 VFBE - - 1 V DC current gain IC = 5 mA, VCE = 6 V hFE 55 90 160 - 3) This test assures V(BR)CE0 > 12 V. Semiconductor Group 2 Draft A03 1998-04-01 BFY 183 Table 3 AC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. IC = 20 mA, VCE = 5 V, f = 500 MHz IC = 25 mA, VCE = 8 V, f = 500 MHz 6.5 - 7.5 8 - CCB Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz - 0.32 0.44 pF Collector-emitter capacitance CCE VCE = 10 V, VBE = vbe = 0, f = 1 MHz - 0.34 - pF Emitter-base capacitance CEB VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz - 1.1 1.4 pF Noise figure IC = 8 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F - 2.3 2.9 dB Power gain IC = 20 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Gma 4) 12.5 14 - dB Transducer gain IC = 20 mA, VCE = 5 V, f = 2 GHz, ZS = ZL = 50 W ½S21e½2 9 10.5 - dB Output power IC = 30 mA, VCE = 5 V, f = 2 GHz, PIN = 7 dBm, ZS = ZL = 50 W Pout 13.5 14.5 - dBm Transition frequency 4) fT GHz 2 S21 G ma = S21 ----------- ( k Ð k Ð 1 ), G ms = ----------- S12 Semiconductor Group S12 3 Draft A03 1998-04-01 BFY 183 Order Instructions Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: QÉ BFY183 (x) (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1713 BFY183 ES For BFY183 in ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: [email protected] Semiconductor Group 4 Draft A03 1998-04-01 BFY 183 1.05 ±0.25 1.02 ±0.1 0.76 3 ø1.65 ±0.1 1 XY 4.2 -0.2 0.5 ±0.1 2 4 0.1 +0.05 -0.03 1.78 GXM05552 Figure 1 Micro-X1 Package Semiconductor Group 5 Draft A03 1998-04-01