BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 22 GHz • SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line 4 3 1 2 Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 02 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 BFY420 (ql) (ql) Quality Level: - see below C 2 E 3 Package 4 B E Micro-X P: Professional Quality, Ordering Code: Q62702F1662 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1709 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY420 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 4.5 V Collector-base voltage VCBO 15 V Emitter-base voltage VEBO 1.5 V Collector current IC 35 mA Base current IB 3.0 mA Total power dissipation, 1), 2) TS ≤ 129°C Ptot 160 mW Junction temperature Tj 175 °C Operating temperature range Top -65...+175 °C Storage temperature range Tstg -65...+175 °C Rth JS < 285 K/W Thermal Resistance Junction-soldering point 2) Notes.: 1) At TS = + 129 °C. For TS > + 129 °C derating is required. 2) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. ICBO - - 30 nA ICEX - - 200 µA DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 Collector-emitter cutoff current 1.) VCE = 4.5 V, IB = 1.0µA Emitter-base cuttoff current (t.b.d.) IEBO - - 20 µA hFE 50 90 150 - VEB = 1.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 1 V Notes: 1.) This Test assures V(BR)CE0 > 4.5V Semiconductor Group 2 of 5 Draft B, September 99 BFY420 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT GHz IC = 30mA, VCE = 3 V, f = 2.0 GHz Collector-base capacitance 20 22 - CCB - 0.14 0.9 pF CCE - 0.46 0.85 pF CEB - 0.67 3.0 pF F - 1.1 1.7 dB 14 18 - dB - 21 - dB - 12 - dBm VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = Zsopt Insertion power gain 2 |S21e| IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZL = 50 Ω Power gain Gms 1.) IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt 1dB Compression point P-1dB IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt Notes.: 1) Gms = S 21 S12 Semiconductor Group 3 of 5 Draft B, September 99 BFY420 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: Q.......... BFY420 (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1709 BFY420 ES For BFY420 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: ++89 234 24480 ++89 234 28438 e-mail: Address: [email protected] Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 4 of 5 Draft B, September 99 BFY420 Micro-X Package Infineon Technologies AG 1998. All Rights Reserved. 4 3 1 2 Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 5 of 5 Draft B, September 99