TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC1014 v00.0312 Typical Applications Features The HMC1014 is ideal for: P1dB Output Power: +24.5 dBm • Point-to-Point Radios Psat Output Power: +27.5 dBm • Point-to-Multi-Point Radios High Gain: 21 dB • VSAT & SATCOM Output IP3: +35 dBm • Military & Space Supply Voltage: Vdd = +6V @ 500 mA TE 50 Ohm Matched Input/Output Die Size: 2.76 x 1.6 x 0.1 mm Functional Diagram General Description LE The HMC1014 is a four stage GaAs pHEMT MMIC Medium Power Amplifier die which operates between 33.5 and 46.5 GHz. The amplifier provides 21 dB of gain, +27.5 dBm of saturated output power, and 27% PAE from a +6V supply. With up to +35 dBm OIP3 the HMC1014 is ideal for high linearity applications in miltary and space as well as point-to-point and pointto-multi-point radios. The HMC1014 amplifier I/Os are internally matched facilitating integration into mutlichip-modules (MCMs). All data shown herein was measured with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). B SO Amplifiers - Linear & Power - CHIP GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Electrical Specifications, TA = +25° C, Vdd1 - Vdd8 = +6V, Idd = 500 mA [1] Min. O Parameter Frequency Range Max. Min. 33.5 - 43 Gain 18 Gain Variation Over Temperature Input Return Loss Output Return Loss 21 22 Saturated Output Power (Psat) [2] Total Supply Current Typ. 43 - 46.5 18 Max. Units GHz 21 dB 0.029 0.035 dB/ °C 25 32 dB 18 Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Typ. 17 dB 23.5 dBm 27.5 26.5 dBm 35 34 dBm 500 500 mA 24.5 21 [1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical. [2] Measurement taken at Pout / tone = +15 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Gain & Return Loss Gain vs. Temperature 20 +25 C +85 C -55 C 26 S21 S11 S22 24 GAIN (dB) 0 -10 -20 TE 18 -40 -50 16 31 33 35 37 39 41 43 45 47 33 49 FREQUENCY (GHz) 35 37 41 43 45 47 LE 0 Output Return Loss vs. Temperature 0 +25 C +85 C -55 C -20 -30 -40 -50 33 35 37 39 41 +25 C +85 C -55 C -10 B SO -10 43 45 -20 -30 -40 47 33 35 37 FREQUENCY (GHz) 39 41 43 45 47 45 47 FREQUENCY (GHz) P1dB vs Supply Voltage O P1dB vs. Temperature 29 29 +25C +85C -55C 5V 5.5V 6V 27 P1dB (dBm) 27 P1dB (dBm) 39 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 22 20 -30 RESPONSE (dB) RESPONSE (dB) 10 Amplifiers - Linear & Power - CHIP 28 30 25 23 21 25 23 21 19 19 33 35 37 39 41 FREQUENCY (GHz) 43 45 47 33 35 37 39 41 43 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz 27 27 Psat (dBm) 29 25 23 23 5V 5.5V 6V 21 19 19 33 35 37 39 41 43 45 47 33 35 37 41 43 45 47 45 47 45 47 Psat vs. Supply Current P1dB vs. Supply Current 29 29 400 mA 450 mA 500 mA 25 23 21 19 33 27 B SO 27 35 37 39 41 43 45 25 23 400 mA 450 mA 500 mA 21 19 47 33 35 37 FREQUENCY (GHz) 41 43 Output IP3 vs. Supply Current, Pout/tone = +15 dBm 43 39 39 35 35 IP3 (dBm) 43 31 +25 C +85 C -55 C 27 39 FREQUENCY (GHz) O IP3 (dBm) 39 FREQUENCY (GHz) LE FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/tone = +15 dBm 31 400 mA 450 mA 500 mA 27 23 23 33 35 37 39 41 FREQUENCY (GHz) 3 25 TE +25 C +85 C -55 C Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 29 21 P1dB (dBm) Amplifiers - Linear & Power - CHIP Psat vs. Temperature 43 45 47 33 35 37 39 41 43 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Output IP3 vs. Supply Voltage, Pout/tone = +15 dBm Output IM3 @ Vdd = +5V 43 50 39 IM3 (dBc) IP3 (dBm) 40 35 31 30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 44 GHz 46 GHz TE 20 5V 5.5V 6V 27 10 23 0 33 35 37 39 41 43 45 47 10 FREQUENCY (GHz) 14 16 20 22 24 20 22 24 LE Output IM3 @ Vdd = +6V 60 60 50 50 40 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 44 GHz 46 GHz 10 0 10 12 14 16 18 20 22 IM3 (dBc) 30 B SO 40 20 30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 44 GHz 46 GHz 20 10 0 24 10 12 14 16 Pout/TONE (dBm) O 30 Pout (dBm), Gain (dB), PAE (%) 30 25 20 15 Pout Gain PAE 10 18 Pout/TONE (dBm) Power Compression @ 40 GHz Power Compression @ 34 GHz Pout (dBm), Gain (dB), PAE (%) 18 Pout/TONE (dBm) Output IM3 @ Vdd =+5.5V IM3 (dBc) 12 Amplifiers - Linear & Power - CHIP 60 5 25 20 15 Pout Gain PAE 10 5 0 0 -9 -6 -3 0 3 INPUT POWER (dBm) 6 9 12 -9 -6 -3 0 3 6 9 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Gain & Power vs. Supply Current @ 40 GHz Power Compression @ 46 GHz 35 Gain (dB), P1dB (dBm), Psat (dBm) 20 15 10 5 -9 -6 -3 0 3 6 GAIN(dB) P1dB(dBm) Psat(dBm) 30 25 20 TE Pout Gain PAE 15 10 9 400 420 440 460 480 500 Idd (mA) INPUT POWER (dBm) LE Gain & Power vs. Supply Voltage @ 40 GHz Reverse Isolation vs. Temperature 35 0 GAIN(dB) P1dB(dBm) Psat(dBm) 25 20 15 10 5 -10 B SO 30 5.2 5.5 5.7 ISOLATION (dB) Pout (dBm), Gain (dB), PAE (%) 25 0 Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - CHIP 30 +25C +85C -55C -20 -30 -40 -50 -60 6 33 35 37 Vdd (V) 39 41 43 45 47 FREQUENCY (GHz) 6 POWER DISSIPATION (W) O Power Dissipation 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 44 GHz 46 GHz 5 4 3 2 1 0 -10 -6 -2 2 6 10 INPUT POWER (dBm) 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz +7 Vdc RF Input Power (RFIN) +18 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 48.3 mW/°C above 85 °C) 3.14 W Thermal Resistance (channel to die bottom) 20.7 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C Vdd (V) Idd (mA) +5 500 +5.5 500 +6 500 TE Drain Bias Voltage (Vdd) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS O B SO LE Outline Drawing Amplifiers - Linear & Power - CHIP Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Function Description Interface Schematic 1 RFIN RF signal input. This pin is AC coupled and matched to 50 Ohms over the operating frequency range. 2, 12 Vgg1, Vgg2 Gate control for amplifier. Amplifier can be biased by either Vgg1 or Vgg2. External bypass capacitors of 100 pF, 0.01uF, and 4.7 uF capacitors are required. 3, 4, 5, 6 Vdd1-4 Drain bias voltage for the top half of the amplifier. External bypass capacitors of 100 pF required for each pin, followed by common 0.01uF and 4.7 uF Capacitors 7 RFOUT RF signal output. This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 8, 9, 10, 11 Vdd5-8 Drain bias voltage for the bottom half of the amplifier. External bypass capacitors of 100 pF required for each pin followed by common 0.01 uF and 4.7 uF capacitors. B SO LE TE Pin Number Die Bottom GND Die bottom must be connected to RF/DC ground. Application Circuit O Amplifiers - Linear & Power - CHIP Pin Descriptions 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Amplifiers - Linear & Power - CHIP O B SO LE TE Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). TE 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Handling Precautions LE Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. B SO Amplifiers - Linear & Power - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting O The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1014 v00.0312 GaAs pHEMPT MMIC 0.5 Watt POWER AMPLIFIER 33.5 - 46.5 GHz Amplifiers - Linear & Power - CHIP O B SO LE TE Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10