Product Overview

Product Overview
MJ11012: 30 A, 60 V NPN Darlington Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier
applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.
Features
• High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
• Monolithic Construction with Built-in Base Emitter Shunt Resistor
• Junction Temperature to +200°C
Part Electrical Specifications
Product
Compliance
Status
Polarity
IC
Continuous
(A)
V(BR)CEO Min
(V)
VCE(sat) Max
(V)
hFE Min (k)
hFE Max (k)
fT Min (MHz) Package
Type
MJ11012G
Pb-free
Active
NPN
30
60
3
1
-
4
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO-204-2