Order this document by MJE16204/D SEMICONDUCTOR TECHNICAL DATA NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very resolution, full page, monochrome monitors. • • • • • • 550 Volt Collector–Base Breakdown Capability Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) Application Specific State–of–the–Art Die Design Isolated or Non–Isolated TO–220 Type Packages Fast Switching: 65 ns Inductive Fall Time (Typ) 680 ns Inductive Storage Time (Typ) Low Saturation Voltage: 0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive Low Collector–Emitter Leakage Current — 100 µA Max at 550 Volts — VCES High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits — 9.0 Volts (Min) Case 221D is UL Recognized at 3500 VRMS: File #E69369 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • • • POWER TRANSISTORS 6.0 AMPERES 550 VOLTS — VCES 45 AND 80 WATTS MAXIMUM RATINGS Symbol MJE16204 Unit Collector–Emitter Breakdown Voltage Rating VCES 550 Vdc Collector–Emitter Sustaining Voltage VCEO(sus) 250 Vdc Emitter–Base Voltage VEBO 8.0 Vdc VISOL — — — V Collector Current — Continuous — Pulsed (1) IC ICM 6.0 8.0 Adc Base Current — Continuous — Pulsed (1) IB IBM 2.0 4.0 Adc W(BER) 0.2 mJ PD 80 32 0.64 Watts TJ, Tstg – 55 to 150 _C Symbol Max Unit RθJC 1.56 _C/W TL 260 _C RMS Isolation Voltage(2) (for 1 sec, TA = 25_C, Rel. Humidity < 30%) Per Fig. 14 Per Fig. 15 Per Fig. 16 Repetitive Emitter–Base Avalanche Energy Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TC = 100_C Derated above TC = 25_C Operating and Storage Temperature Range CASE 221A–06 TO–220AB MJE16204 W/_C THERMAL CHARCTERISTICS Characteristic Thermal Resistance — Junction to Case Lead Temperature for Soldering Purposes 1/8″ from the case for 5 seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. * Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink thermal grease applied, and a mounting torque of 6 to 8 inSlbs. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. SCANSWITCH, SWITCHMODE and Designer’s are trademarks of Motorola, Inc. (REPLACES MJF16204) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector Cutoff Current (VCE = 550 Vdc, VBE = 0 V) ICES — — 100 µAdc Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0) IEBO — — 10 µAdc Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0) V(BR)EBO 8.0 11 — Vdc Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) VCEO(sus) 250 325 — Vdc — — 0.25 0.4 0.6 1.0 OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 133 mAdc) (IC = 3.0 Adc, IB = 400 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 400 mAdc) VBE(sat) — 0.9 1.5 Vdc DC Current Gain (ICE = 6.0 Adc, VCE = 5.0 Vdc) hFE 8.0 14 20 — Dynamic Desaturation Interval (IC = 3.0 A, IB1 = 400 mA) tds — 50 — ns Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 100 kHz) Cob — 90 150 pF fT 10 — — MHz Emitter–Base Turn–Off Energy (EB(avalanche) = 500 ns, RBE = 22 Ω) EB(off) — 6.6 — µJ Collector–Heatsink Capacitance (Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink, VCE = 0, ftest = 100 kHz) Cc–hs — 3.0 — pF tsv tfi — — 680 65 1500 150 DYNAMIC CHARACTERISTICS Gain Bandwidth Product (VCE = 10 Vdc, IC = 1.0 A, ftest = 1.0 MHz) SWITCHING CHARACTERISTICS Inductive Load (Table 2) (IC = 3.0 A, IB = 400 mA) Storage Fall Time 2.0%. hFE , DC CURRENT GAIN 60 50 30 TJ = 100°C VCE = 5 V 25°C 20 – 55°C 10 7 5 3 0.5 0.7 1 3 5 2 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical DC Current Gain 2 7 10 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ns 10 7 5 3 TJ = 25°C TJ = 100°C 2 IC/IB1 = 10 1 0.7 0.5 7.5 5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 IC, COLLECTOR CURRENT (AMPS) Figure 2. Typical Collector–Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data 30 20 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ = 25°C 10 7 5 3 2 IC = 1 A 1 0.7 0.5 0.3 0.2 2A 0.1 0.07 0.05 0.03 0.03 0.05 0.07 0.1 3A 6A 0.2 0.3 0.5 0.7 IB, BASE CURRENT (AMPS) 1 2 10 7 5 IC/IB1 = 5 to 10 3 2 TJ = 25°C TJ = 100°C 1 0.7 0.5 0.3 0.2 0.1 0.3 3 0.5 0.7 10K 20 5K 3K 2K 18 TC = 25°C Cib 500 300 200 100 50 30 20 Cob f T, TRANSITION FREQUENCY (MHz) C, CAPACITANCE (pF) 3 5 7 10 20 30 Figure 4. Typical Base–Emitter Saturation Voltage Figure 3. Typical Collector–Emitter Saturation Region 1K 2 1 IC, COLLECTOR CURRENT (AMPS) VCE = 10 V ftest = 1 MHz TC = 25°C 16 14 12 10 8 6 4 2 10 0.1 0.2 0.3 0.5 0 1 2 3 5 10 20 30 50 100 200 300 500 1K VR, REVERSE VOLTAGE (VOLTS) 0 0.5 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) Figure 5. Typical Capacitance Figure 6. Typical Transition Frequency 10 7 5 3 2 7 10 µs MJE16204 1 0.7 0.5 0.3 0.2 TC = 25°C 0.1 0.07 0.05 0.03 0.02 dc 1 ms SECONDARY BREAKDOWN WIREBOND LIMIT THERMAL LIMIT 0.01 3 5 10 30 200 250 20 50 70 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 7 Figure 7. Maximum Forward Biased Safe Operating Area Motorola Bipolar Power Transistor Device Data IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) SAFE OPERATING AREA 6 VBE(off) = 5 V 5 4 3 2 VBE(off) = 0 V IC/IB1 ≥ 5 TJ ≤ 100°C 1 0 50 150 250 350 450 550 VCE(pk), PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. Maximum Reverse Biased Safe Operating Area 3 SAFE OPERATING AREA INFORMATION FORWARD BIAS 1 SECOND BREAKDOWN DERATING 0.8 POWER DERATING FACTOR There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 9. Power Derating REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage–current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the RBSOA characteristics. Table 1. RBSOA/V(BR)CEO(sus) Test Circuit 0.02 µF H.P. 214 OR EQUIV. P.G. + V ≈ 11 V 100 2N6191 20 + 0 – 10 µF RB1 ≈ – 35 V A RB2 0.02 µF + 50 – 2N5337 1 µF 500 100 T1 IC +V 0V T1 [ A VCE(pk) *IC –V Lcoil (ICpk) VCC IC(pk) –V VCE L T.U.T. MR856 T1 adjusted to obtain IC(pk) IB1 *IB 50 IB Vclamp VCC IB2 V(BR)CEO L = 10 mH RB2 = ∞ VCC = 20 Volts 4 *Tektronix *P–6042 or *Equivalent RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Note: Adjust – V to obtain desired VBE(off) at Point A. Motorola Bipolar Power Transistor Device Data Table 2. High Resolution Deflection Application Simulator + 24 V U2 MC7812 G VO VI N D + C1 100 µF C2 10 µF (IB) R7 2.7 k R8 9.1 k R9 470 R10 47 C4 0.005 (DC) R2 R510 R3 250 SYNC Q1 R6 1k 7 O S 8 %C VCC 1 G OUT U1 N D MC1391P 2 + 100 V R10 470 1W D2 MUR460 Q3 MJE 15031 T1 R12 470 1W BS170 CY VCE LB Q4 DUT R4 22 D1 MUR110 LB = 0.5 µH CY = 0.01 µF LY = 13 µH T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Primary Inductance Gap: LP = 250 µH 200 2K TC = 25°C TC = 25°C 1K 700 ICI/B1 = 7.5 500 10 tf , FALL TIME (ns) t s , STORAGE TIME (ns) C6 100 µF C3 10 µF LY C5 0.1 6 Q5 MJ11016 R1 1k 6.2 V + (IC) R5 1k Q2 MJ11016 + 100 70 ICI/B1 = 7.5 50 10 30 300 200 20 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) 7 Figure 10. Typical Collector Current Storage Time in Deflection Circuit Simulator Motorola Bipolar Power Transistor Device Data 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10 Figure 11. Typical Collector Current Fall Time in Deflection Circuit Simulator 5 tfi 90% IC(pk) VCE IC VCE = 20 V 10% IC(pk) 0 tsv 0 0% IB COLLECTOR–EMITTER VOLTAGE (VOLTS) DYNAMIC DESATURATIION 5 VCE 4 3 DYNAMIC SATURATION TIME IS MEASURED FROM VCE = 1 V TO VCE = 5 V 2 1 0 tds TIME (ns) Figure 12. Deflection Simulator Switching Waveforms From Circuit in Table 2 The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, “dynamic desaturation.” In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turn–off transition. A sluggish transition results in serious consequences. As the saturation voltage of the output transistor increases, 6 Figure 13. Definition of Dynamic Saturation Measurement the voltage across the yoke drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 12 and 13) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector current ramp, excellent turn–off switching performance, and significantly lower overall power dissipation. Motorola Bipolar Power Transistor Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 D = 0.5 0.2 0.2 0.1 0.07 0.05 0.1 RθJC(t) = r(t) RθJC RθJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.02 0.01 0.02 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 10 k Figure 14. Typical Thermal Response for MJE16204 Motorola Bipolar Power Transistor Device Data 7 PACKAGE DIMENSIONS B –T– F C T 4 S A Q 1 2 3 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. U H K Z L R V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *MJE16204/D* MJE16204/D