Product Overview

Product Overview
MJ21196: Bipolar Transistor, NPN, 250 V, 16 A
For complete documentation, see the data sheet
Product Description
The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk
head positioners and linear applications.
Features
•
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 3 A, 80 V, 1 Second
Pb-Free Packages are Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
IC
Continuous
(A)
VCEO(sus) Min hFE Min
(V)
hFE Max
PTM Max
(W)
fT Min (MHz) Package
Type
MJ21196G
Pb-free
Active
NPN
16
250
75
250
5
25
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO-204-2