Product Overview MJ21196: Bipolar Transistor, NPN, 250 V, 16 A For complete documentation, see the data sheet Product Description The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications. Features • • • • • Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Second Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) VCEO(sus) Min hFE Min (V) hFE Max PTM Max (W) fT Min (MHz) Package Type MJ21196G Pb-free Active NPN 16 250 75 250 5 25 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-204-2