MJ21195 − PNP MJ21196 − NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • 16 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 250 VOLTS, 250 WATTS Total Harmonic Distortion Characterized High DC Current Gain − hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Sec Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage − 1.5V VCEX 400 Vdc IC 16 30 Adc Base Current − Continuous IB 5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 250 1.43 W W/_C TJ, Tstg −65 to +200 _C Symbol Max Unit RqJC 0.7 _C/W Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range TO−204AA (TO−3) CASE 1−07 MARKING DIAGRAM MJ2119xG AYWW MEX THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. MJ2119x = Device Code x = 5 or 6 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package Shipping MJ21195 TO−204 100 Units / Tray TO−204 (Pb−Free) 100 Units / Tray TO−204 100 Units / Tray TO−204 (Pb−Free) 100 Units / Tray MJ21195G MJ21196 MJ21196G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 4 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJ21195/D MJ21195 − PNP MJ21196 − NPN ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted) Symbol Min Typical Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 100 mAdc 5 2.5 − − − − 25 8 − − − − − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) 75 − − 2.2 Vdc − − 1.4 4 Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% NPN MJ21196 f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) PNP MJ21195 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VCE = 10 V 5V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJ21195 − PNP MJ21196 − NPN TYPICAL CHARACTERISTICS PNP MJ21195 NPN MJ21196 1000 TJ = 100°C 100 0.1 25°C TJ = 100°C 100 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 VCE = 20 V 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) PNP MJ21195 NPN MJ21196 TJ = 100°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 100 25°C −25 °C TJ = 100°C 100 25°C −25 °C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 VCE = 5 V 0.1 Figure 5. DC Current Gain, VCE = 5 V PNP MJ21195 IB = 2 A 25 1.5 A 20 1A 15 0.5 A IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 100 NPN MJ21196 30 10 5.0 TJ = 25°C 0 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 5 V 30 0 100 Figure 4. DC Current Gain, VCE = 20 V 1000 10 25°C −25 °C −25 °C VCE = 20 V 10 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.5 A 25 1A 20 0.5 A 15 10 5.0 0 25 IB = 2 A TJ = 25°C 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJ21195 − PNP MJ21196 − NPN TYPICAL CHARACTERISTICS PNP MJ21195 NPN MJ21196 1.6 TJ = 25°C IC/IB = 10 2.5 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 2.0 1.5 VBE(sat) 1.0 VCE(sat) 0.5 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 1.2 VBE(sat) 1.0 0.8 0.6 VCE(sat) 0.4 0.2 0 100 TJ = 25°C IC/IB = 10 1.4 0.1 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages NPN MJ21196 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) PNP MJ21195 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 0.1 VCE = 20 V (SOLID) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 Figure 11. Typical Base−Emitter Voltage IC , COLLECTOR CURRENT (AMPS) 50 ms 1 sec 0.1 250 ms 1.0 10 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 12. Typical Base−Emitter Voltage 100 1.0 100 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJ21195 − PNP MJ21196 − NPN 10000 10000 C, CAPACITANCE (pF) Cib 1000 Cob 1000 TJ = 25°C ftest = 1 MHz 100 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 100 100 0.1 Cob 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21195 Typical Capacitance Figure 15. MJ21196 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) Cib 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT −50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 8.0 W 100 MJ21195 − PNP MJ21196 − NPN PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. A N C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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