Order this document by MJ21195/D SEMICONDUCTOR TECHNICAL DATA The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *Motorola Preferred Device 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS • Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 3 A, 80 V, 1 Second CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 16 30 Adc Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 250 1.43 Watts W/°C TJ, Tstg – 65 to +200 °C Symbol Max Unit RθJC 0.7 °C/W Operating and Storage Junction Temperature Range āā THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 — — Vdc ICEO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%. (continued) Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO — — 100 µAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX — — 100 µAdc 5 2.5 — — — — 25 8 — — — — 2.2 — — — — 1.4 4 OFF CHARACTERISTICS SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 80 Vdc, t = 1 s (non–repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) hFE 75 Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD % hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2% — 0.8 — — 0.08 — fT 4 — — MHz Cob — — 500 pF f T, CURRENT BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VCE = 10 V 5V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product 2 NPN MJ21196 f T, CURRENT BANDWIDTH PRODUCT (MHz) PNP MJ21195 10 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product Motorola Bipolar Power Transistor Device Data 10 TYPICAL CHARACTERISTICS PNP MJ21195 NPN MJ21196 1000 TJ = 100°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 25°C 100 TJ = 100°C 100 25°C – 25°C – 25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJ21195 NPN MJ21196 1000 TJ = 100°C 100 h FE , DC CURRENT GAIN 1000 h FE , DC CURRENT GAIN 1.0 10 IC, COLLECTOR CURRENT (AMPS) 25°C – 25°C TJ = 100°C 100 25°C – 25°C VCE = 5 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJ21195 NPN MJ21196 30 30 25 IC, COLLECTOR CURRENT (A) IB = 2 A IC , COLLECTOR CURRENT (A) VCE = 5 V 10 1.5 A 20 1A 15 0.5 A 10 5.0 IB = 2 A 1.5 A 25 1A 20 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 25 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 25 Figure 8. Typical Output Characteristics 3 TYPICAL CHARACTERISTICS PNP MJ21195 NPN MJ21196 1.6 TJ = 25°C IC/IB = 10 2.5 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 2.0 1.5 VBE(sat) 1.0 VCE(sat) 0.5 TJ = 25°C IC/IB = 10 1.4 1.2 VBE(sat) 1.0 0.8 0.6 VCE(sat) 0.4 0.2 0 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages NPN MJ21196 TJ = 25°C VCE = 5 V (DASHED) VCE = 20 V (SOLID) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 11. Typical Base–Emitter Voltage VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) PNP MJ21195 10 1.0 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 12. Typical Base–Emitter Voltage IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 50 ms 10 1 sec 250 ms 1.0 TJ = 25°C 0.1 1.0 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data 10000 10000 Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) Cib 1000 Cob 1000 TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 Cob 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21195 Typical Capacitance Figure 15. MJ21196 Typical Capacitance 100 1.2 T , TOTAL HARMONIC HD DISTORTION (%) 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 Ω DUT 0.5 Ω 0.5 Ω 8.0 Ω DUT –50 V Figure 17. Total Harmonic Distortion Test Circuit Motorola Bipolar Power Transistor Device Data 5 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M DIM A B C D E G H K L N Q U V –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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