Product Overview

Product Overview
MJE243: 4.0 A, 100 V NPN Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
Features
• High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
• High DC Current Gain @ IC = 200 mAdc
hFE = 40-200
hFE = 40-120 - MJE243, MJE253
• Low Collector-Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
• Pb-Free Packages are Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
Type
MJE243G
Pb-free
Active
NPN
General
Purpose
Halide free
VCE(sat)
Max (V)
IC
Continuo
us (A)
V(BR)CEO
Min (V)
hFE Min
hFE Max
fT Min
(MHz)
PTM Max
(W)
Package
Type
4
100
40
180
40
15
TO-2253
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016