Product Overview MJE253: 4.0 A, 100 V PNP Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications. Features • High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 - MJE243, MJE253 • Low Collector-Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc • High Current Gain Bandwidth Product fT = 40 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity Type MJE253G Pb-free Active PNP General Purpose Halide free VCE(sat) Max (V) IC Continuo us (A) V(BR)CEO Min (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type 4 100 40 180 40 15 TO-2253 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016