MJE243 D

MJE243G (NPN),
MJE253G(PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
•
•
•
•
•
•
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
High Collector−Emitter Sustaining Voltage
High DC Current Gain
Low Collector−Emitter Saturation Voltage
High Current Gain Bandwidth Product
Annular Construction for Low Leakages
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
7.0
Vdc
IC
4.0
Adc
ICM
8.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
15
120
W
mW/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
1.5
12
W
mW/_C
–65 to +150
_C
Collector Current − Continuous
Collector Current − Peak
Operating and Storage Junction
Temperature Range
TJ, Tstg
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PNP
NPN
COLLECTOR 2, 4
COLLECTOR 2, 4
3
BASE
3
BASE
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
JE2x3G
THERMAL CHARACTERISTICS
Characteristic
EMITTER 1
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.34
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.4
_C/W
Y
= Year
WW
= Work Week
JE2x3 = Device Code
x = 4 or 5
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 16
1
Device
Package
Shipping
MJE243G
TO−225
(Pb−Free)
500 Units/Box
MJE253G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
MJE243/D
MJE243G (NPN), MJE253G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
100
−
−
−
0.1
0.1
−
0.1
40
15
180
−
−
−
0.3
0.6
−
1.8
−
1.5
40
−
−
50
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCE = 100 Vdc, IE = 0, TC = 125_C)
ICBO
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
V
mA
mA
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
V
V
V
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MHz
Cob
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
100
80
120
TA
PD, POWER DISSIPATION (WATTS)
TC
PD, POWER DISSIPATION (WATTS)
MJE243G (NPN), MJE253G (PNP)
0
160
140
T, TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+30 V
1K
500
300
200
RC
25 ms
+11 V
SCOPE
RB
100
t, TIME (ns)
0
D1
51
-9.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tr
-4 V
50
30
20
td
10
5
3
2
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1
0.01
NPN MJE243
PNP MJE253
0.02 0.03 0.05 0.1
1
2
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
qJC(t) = r(t) qJC
qJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.02
0.01
0.03
0.02
0.01
0.02
0 (SINGLE PULSE)
0.05
0.1
0.2
0.5
3
5
10
Figure 3. Turn−On Time
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
VCC = 30 V
IC/IB = 10
TJ = 25°C
1.0
2.0
t, TIME (ms)
5.0
Figure 4. Thermal Response
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3
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
200
MJE243G (NPN), MJE253G (PNP)
10
100ms
IC, COLLECTOR CURRENT (AMP)
2.0
1.0ms
1.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.5
0.2
0.1
0.05
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
500ms
5.0
5.0ms
0.02
MJE243/MJE253
0.01
1.0
50 70 100
2.0 3.0
5.0 7.0 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
10K
200
ts
t, TIME (ns)
1K
TJ = 25°C
100
C, CAPACITANCE (pF)
5K
3K
2K
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
500
300
200
100
50
30
20
10
0.01
Cib
70
50
30
Cob
20
tf
MJE243 (NPN)
MJE253 (PNP)
NPN MJE243
PNP MJE253
0.2 0.3 0.5
1
2
0.02 0.03 0.05 0.1
IC, COLLECTOR CURRENT (AMPS)
3
5
10
1.0
10
Figure 6. Turn−Off Time
2.0
3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
50 70 100
MJE243G (NPN), MJE253G (PNP)
NPN
MJE243
PNP
MJE253
500
VCE = 1.0 V
VCE = 2.0 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
300
200
200
TJ = 150°C
25°C
100
70
50
-55°C
30
20
10
7.0
5.0
0.04 0.06
0.1
1.0
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
25°C
-55°C
30
20
10
7.0
5.0
3.0
2.0
0.04 0.06
4.0
VCE = 1.0 V
VCE = 2.0 V
TJ = 150°C
100
70
50
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 8. DC Current Gain
1.4
1.4
TJ = 25°C
1.2
1.2
1.0
1.0
0.8
0.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
IC/IB = 10
0.4
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1.0 V
0.6
IC/IB = 10
0.4
5.0
5.0
0.2
0.2
VCE(sat)
VCE(sat)
0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
0
0.04 0.06
4.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2
0.4
0.6
1.0
2.0
4.0
2.0
4.0
IC, COLLECTOR CURRENT (AMP)
+2.5
+2.0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
Figure 9. “On” Voltages
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
*qVC FOR VCE(sat)
0
25°C to 150°C
-55°C to 25°C
-0.5
-1.0
25°C to 150°C
-1.5
-2.0
qVB FOR VBE
-2.5
0.04 0.06
0.1
-55°C to 25°C
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
+2.5
+2.0
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
25°C to 150°C
*qVC FOR VCE(sat)
0
-55°C to 25°C
-0.5
-1.0
-1.5
25°C to 150°C
qVB FOR VBE
-2.5
0.04 0.06
4.0
-55°C to 25°C
-2.0
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
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5
MJE243G (NPN), MJE253G (PNP)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
2
3
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MJE243/D