MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc • • • • http://onsemi.com hFE = 40 −200 = 40 −120 Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb−Free Packages are Available* TO−225 CASE 77 STYLE 1 3 2 1 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 7.0 Vdc IC 4.0 8.0 Adc Base Current IB 10 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 120 W mW/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.5 12 W mW/_C TJ, Tstg –65 to +150 _C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 8.34 _C/W Thermal Resistance, Junction−to−Ambient qJA 83.4 _C/W Collector Current − Continuous − Peak Operating and Storage Junction Temperature Range MARKING DIAGRAM YWW JE2x3G Y = Year WW = Work Week JE2x3 = Device Code x = 4 or 5 G = Pb−Free Package THERMAL CHARACTERISTICS ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Device MJE243 MJE243G MJE253 MJE253G Package Shipping TO−225 500 Units/Box TO−225 (Pb−Free) 500 Units/Box TO−225 500 Units/Box TO−225 (Pb−Free) 500 Units/Box Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 13 1 Publication Order Number: MJE243/D MJE243 − NPN, MJE253 − PNP ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − V − − 0.1 0.1 mA mA − 0.1 mAdc 40 15 180 − − − 0.3 0.6 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS hFE DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) − Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) V Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) − 1.8 V Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.5 V fT 40 − MHz Cob − 50 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) http://onsemi.com 2 MJE253 − PNP 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 100 80 120 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) MJE243 − NPN, 0 160 140 T, TEMPERATURE (°C) Figure 1. Power Derating VCC +30 V 1K 500 300 200 RC 25 ms +11 V SCOPE RB 100 t, TIME (ns) 0 D1 51 -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr -4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 1 0.01 NPN MJE243 PNP MJE253 0.02 0.03 0.05 0.1 1 2 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.01 0.02 5 10 0.1 qJC(t) = r(t) qJC qJC = 8.34°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0.03 0.02 3 Figure 3. Turn−On Time Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 VCC = 30 V IC/IB = 10 TJ = 25°C 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 3 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 MJE243 − NPN, 10 100ms IC, COLLECTOR CURRENT (AMP) 1.0ms 1.0 dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500ms 5.0 2.0 MJE253 − PNP 5.0ms 0.02 MJE243/MJE253 0.01 1.0 50 70 100 2.0 3.0 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 10K 200 ts t, TIME (ns) 1K TJ = 25°C 100 C, CAPACITANCE (pF) 5K 3K 2K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 500 300 200 100 50 30 20 10 0.01 Cib 70 50 30 Cob 20 tf MJE243 (NPN) MJE253 (PNP) NPN MJE243 PNP MJE253 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) 3 5 10 1.0 10 Figure 6. Turn−Off Time 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 70 100 MJE243 − NPN, MJE253 − PNP NPN MJE243 PNP MJE253 500 VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 200 TJ = 150°C 25°C 100 70 50 -55°C 30 20 10 7.0 5.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 25°C -55°C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150°C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 1.4 TJ = 25°C 1.2 1.2 1.0 1.0 0.8 0.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 0.4 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 IC/IB = 10 0.4 5.0 5.0 0.2 0.2 VCE(sat) VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 0 0.04 0.06 4.0 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) +2.5 +2.0 θV, TEMPERATURE COEFFICIENTS (mV/ °C) θV, TEMPERATURE COEFFICIENTS (mV/ °C) Figure 9. “On” Voltages *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 *qVC FOR VCE(sat) 0 25°C to 150°C -55°C to 25°C -0.5 -1.0 25°C to 150°C -1.5 -2.0 qVB FOR VBE -2.5 0.04 0.06 0.1 -55°C to 25°C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 25°C to 150°C *qVC FOR VCE(sat) 0 -55°C to 25°C -0.5 -1.0 -1.5 25°C to 150°C qVB FOR VBE -2.5 0.04 0.06 4.0 -55°C to 25°C -2.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 MJE243 − NPN, MJE253 − PNP PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M −A− 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G R S 0.25 (0.010) M A M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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