SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking SN7002N Package PG-SOT-23 Yes L6327: 3000 pcs/reel sSN SN7002N PG-SOT-23 Yes L6433: 10000 pcs/reel sSN Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 0.2 TA=70°C 0.16 Pulsed drain current Unit ID puls 0.8 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.2A, VDS=48V, di/dt=200A/µs, T jmax=150°C Gate source voltage ESD Class (JESD22-A114-HBM) V 0 (<250V) Power dissipation Ptot 0.36 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev. 2.5 55/150/56 Page 1 2009-14-08 SN7002N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJA K/W at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250µA Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - - 5 I GSS - - 10 nA RDS(on) - 3.9 7.5 Ω RDS(on) - 2.5 5 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.17A Drain-source on-state resistance VGS=10V, ID=0.5A Rev. 2.5 Page 2 2009-14-08 SN7002N Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.09 0.17 - S pF Dynamic Characteristics Transconductance g fs VDS≥2*ID*RDS(on)max, ID=0.16A Input capacitance C iss VGS=0, VDS=25V, - 34 45 Output capacitance C oss f=1MHz - 7.2 9.6 Reverse transfer capacitance C rss - 2.8 4.2 Turn-on delay time td(on) VDD=30V, VGS=10V, - 2.4 3.6 Rise time tr ID=0.5A, RG=6Ω - 3.2 4.8 Turn-off delay time td(off) - 5.3 8 Fall time tf - 3.6 5.4 - 0.14 0.21 - 0.42 0.63 - 1 1.5 V(plateau) VDD =48V, ID = 0.5 A - 4.5 - V IS - - 0.2 A - - 0.8 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =48V, ID =0.5A VDD =48V, ID =0.5A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF = I S - 0.83 1.2 V Reverse recovery time trr VR=30V, IF =lS , - 14.2 21.3 ns Reverse recovery charge Qrr diF/dt=100A/µs - 5.9 8.8 nC Rev. 2.5 Page 3 2009-14-08 SN7002N 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V SN7002N 0.38 0.22 W A 0.32 0.18 0.28 0.16 0.24 0.14 ID Ptot SN7002N 0.12 0.2 0.1 0.16 0.08 0.12 0.06 0.08 0.04 0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 SN7002N 10 °C 10 3 SN7002N K/W A 10 2 t = 200.0µs p 0 / ID 1 ms DS =V ID ZthJA 10 10 1 ) (on R DS 10 -1 10 0 10 ms D = 0.50 0.20 10 10 -1 0.10 0.05 -2 0.02 10 -2 DC 0.01 single pulse 10 -3 10 0 10 1 V 10 10 -3 -7 10 2 VDS Rev. 2.5 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2009-14-08 SN7002N 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 7.5 1 ID 0.75 0.625 6 RDS(on) A 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V Ω 10V 7V 6V 5V 4.5V 4.0V 3.7V 3.5V 3.0V 5.25 4.5 3.75 0.5 3 0.375 2.25 0.25 1.5 0.125 0 0 0.75 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 A 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS 1 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 1 0.4 A S 0.8 0.3 gfs ID 0.7 0.6 0.5 0.25 0.2 0.4 0.15 0.3 0.1 0.2 0.05 0.1 0 0 0.8 1.6 2.4 3.2 4 4.8 V 0 0 6 VGS Rev. 2.5 0.2 0.4 0.6 0.8 A 1.1 ID Page 5 2009-14-08 SN7002N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.5 A, VGS = 10 V parameter: VGS = VDS ; ID =26µA SN7002N 2.2 15 Ω V 98% 1.8 11 VGS(th) RDS(on) 12 10 9 1.6 typ. 1.4 1.2 8 7 1 6 2% 98% 0.8 5 0.6 4 3 0.4 typ 2 0.2 1 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 2 10 0 SN7002N A Ciss pF C IF 10 -1 10 1 Coss 10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 V 10 -3 0 30 VDS Rev. 2.5 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-14-08 SN7002N 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , V(BR)DSS = f (Tj ) ID = 0.2 A pulsed, Tj = 25 °C 16 SN7002N SN7002N 72 V V(BR)DSS V VGS 12 10 0.2 VDS max 66 64 0.5 VDS max 8 68 0.8 VDS max 62 6 60 4 58 2 0 0 56 0.4 0.8 1.2 1.6 2 nC 2.8 QG Rev. 2.5 54 -60 -20 20 60 100 °C 180 Tj Page 7 2009-14-08 SN7002N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.5 page 8 2009-14-08 SN7002N Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.5 page 9 2009-14-08