BSS169 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 100 V RDS(on),max 12 Ω 0.09 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Halogen-free according to AEC61249-2-21 • Qualified according to AEC Q101 Type Package Pb-free Tape and Reel Information Marking BSS169 PG-SOT-23 Yes H6327: 3000 pcs/reel SFs BSS169 PG-SOT-23 Yes 1) 1) H6906: 3000 pcs/reel sorted in VGS(th) bands SFs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.17 T A=70 °C 0.14 0.68 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.17 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS ESD Class P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) 6 ±20 JESD22-A114-HBM Power dissipation Value Unit A kV/µs V Class 0 0.36 W -55 ... 150 °C 55/150/56 see table on next page and diagram 11 Rev. 1.8 page 1 ######## BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 100 - - -2.9 -2.2 -1.8 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA Gate threshold voltage V GS(th) V DS=3 V, I D=50 µA Drain-source cutoff current I D(off) V DS=100 V, V GS=-10 V, T j=25 °C - - 0.1 V DS=100 V, V GS=-10 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 90 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.05 A - 5.3 12 V GS=10 V, I D=0.17 A - 2.9 6 |V DS|>2|I D|R DS(on)max, I D=0.14 A 0.10 0.19 - S -2 - -1.8 V K -2.15 - -1.95 L -2.3 - -2.1 M -2.45 - -2.25 N -2.6 - -2.4 Transconductance g fs Ω Threshold voltage V GS(th) sorted in bands2) J 2) V GS(th) V DS=3 V, I D=50 µA Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.8 page 2 ######## BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - 51 68 - 9 13 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 4 7 Turn-on delay time t d(on) - 2.9 4.2 Rise time tr - 2.7 4.0 Turn-off delay time t d(off) - 11 17 Fall time tf - 27 40 Gate to source charge Q gs - 0.12 0.16 Gate to drain charge Q gd - 0.9 1.4 Gate charge total Qg - 2.1 2.8 Gate plateau voltage V plateau - -0.43 - V - - 0.17 A - - 0.68 - 0.79 1.2 V - 20.5 25.6 ns - 9.7 12.1 nC V GS=-10 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=-3…7 V, I D=0.12 A, R G=6 Ω ns Gate Charge Characteristics V DD=80 V, I D=0.12 A, V GS=-3 to 7 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.8 T A=25 °C V GS=-10 V, I F=0.17 A, T j=25 °C V R=50 V, I F=0.12 A, di F/dt =100 A/µs page 3 ######## BSS169 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.2 0.4 0.16 0.3 ID [A] Ptot [W] 0.12 0.2 0.08 0.1 0.04 0 0 0 40 80 120 0 160 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 0.5 100 10 µs 100 µs 102 10 ms 10-1 0.2 ZthJA [K/W] ID [A] 1 ms 0.1 0.05 0.02 101 10-2 single pulse DC 10-3 100 100 101 102 103 VDS [V] Rev. 1.8 0.01 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 ######## BSS169 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.5 -0.2 V 14 0V 0.2 V -0.1 V 0.1 V 1V 0.5 V 10 V 0.4 12 0.5 V 10 RDS(on) [Ω] 0.3 ID [A] 0.2 V 0.1 V 0V -0.1 V 0.2 8 1V 6 -0.2 V 4 10 V 0.1 2 0 0 0 2 4 6 8 10 0 0.1 0.2 0.3 VDS [V] 0.4 0.5 0.40 0.50 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.5 0.4 0.35 0.4 0.3 0.25 ID [A] gfs [S] 0.3 0.2 0.2 0.15 0.1 0.1 0.05 0 -2 -1 0 1 2 VGS [V] Rev. 1.8 0 0.00 0.10 0.20 0.30 ID [A] page 5 ######## BSS169 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.05 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=50 µA 24 -1.1 20 -1.5 16 -1.9 VGS(th) [V] RDS(on) [Ω] parameter: I D 98 % 12 8 98 % typ -2.3 -2.7 typ 2% 4 -3.1 0 -3.5 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-10 V; f =1 MHz 10 103 1 102 ID [mA] Ciss M L K J C [pF] N 0.1 Coss 101 50 µA 100 0.01 -3 -2.5 -2 -1.5 -1 VGS [V] Rev. 1.8 Crss 0 10 20 30 VDS [V] page 6 ######## BSS169 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.12 A pulsed parameter: T j parameter: V DD 100 8 0.5 VDS(max) 25 °C 150 °C 6 150 °C, 98% 0.2 VDS(max) 25 °C, 98% 10-1 0.8 VDS(max) VGS [V] 4 IF [A] 10-2 2 0 10-3 -2 10-4 -4 0 0.5 1 1.5 VSD [V] 0 0.5 1 1.5 2 2.5 Qgate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA VBR(DSS) [V] 120 100 80 -60 -20 20 60 100 140 180 Tj [°C] Rev. 1.8 page 7 ######## BSS169 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.8 page 8 ######## BSS169 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.8 page 9 ########