HUM2001 – HUM2020 TM PIN DIODE High Power Stud ® RoHS Compliant Versions Available KEY FEATURES DESCRIPTION Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance. Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical bonds on both sides are utilized to achieve high reliability and high surge capability. High Power Stud Mount www.MICROSEMI.com With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Package. High Zero Bias Impedance Very Low Inductance and Capacitance. No Internal Lead Straps. Small Mechanical Outline. RoHS compliant packaging Available1 IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com VOLTAGE RATINGS @ 25C (unless otherwise specified) Part Number Reverse Voltage @ 10uA (V) HUM2001 100 HUM2005 500 HUM2010 1000 HUM2015 1500 HUM2020 2000 APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. The HUM2000 series of products can be supplied with a RoHS compliant finish. Order HUMX2001 – HUMX2020. Consult factory for details. Copyright 2006 Rev: 2009-05-14 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 HUM2001 – HUM2020 1 HUM2001 – HUM2020 PIN DIODE High Power Stud ® TM RoHS Compliant Versions Available Series Resistance RS IF = 500 mA, F = 4 MHz Carrier Lifetime TL IF = 10 mA/100 V Reverse Current IR VR = Voltage rating Parallel Resistance RP f = 10MHz, VR = 100V Forward Voltage VF IF = 500mA MIN. TYPICAL 3.4 MAX. 4.0 Units pF 0.1 0.2 Ohms 10 30 www.MICROSEMI.com ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Parameter Symbol Conditions Total Capacitance CT VR = 100V, F = 1 MHz μs 10 200 μA kOhms 0.85 1.0 V ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Symbol Parameter Limits Units PD 13 W I 100 A Storage Temperature Range TSTG -65 to + 175 °C Operating Temperature Range TOP -65 to + 175 °C Thermal resistance Junction-to Case “C” Stud Only RθJC 7.5 °C/W Average Power Dissipation Non-Repetitive Sinusoidal Surge Current (8.3 ms) ELECTRICALS Copyright 2006 Rev: 2009-05-14 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 HUM2001 – HUM2020 PIN DIODE High Power Stud ® TM RoHS Compliant Versions Available TYPICAL CT VS VR IF CURVE RP VS VOLTAGE www.MICROSEMI.com TYPICAL RS VS IF GRAPHS Copyright 2006 Rev: 2009-05-14 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 HUM2001 – HUM2020 PIN DIODE High Power Stud ® TM RoHS Compliant Versions Available PACKAGE STYLE ‘C’ PACKAGE STYLE ‘D’ PACKAGE STYLE ‘SM’ www.MICROSEMI.com PACKAGE STYLE ‘B’ Ordering Information: Add style letter to suffix for the desired package. IE: HUM2020D MECHANICAL Copyright 2006 Rev: 2009-05-14 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4